X-On Electronics has gained recognition as a prominent supplier of BUK9840-55/CUX MOSFET across the USA, India, Europe, Australia, and various other global locations. BUK9840-55/CUX MOSFET are a product manufactured by NXP. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BUK9840-55/CUX NXP

BUK9840-55/CUX electronic component of NXP
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See Product Specifications
Part No.BUK9840-55/CUX
Manufacturer: NXP
Category: MOSFET
Description: MOSFET N-channel TrenchMOS logic level FET
Datasheet: BUK9840-55/CUX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.5977
10 : USD 0.4919
100 : USD 0.3175
1000 : USD 0.2782
2000 : USD 0.2561
10000 : USD 0.2561
25000 : USD 0.2457
50000 : USD 0.2418
100000 : USD 0.2366
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Transistor Type
Brand
Forward Transconductance Min
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Rds On Drain Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BUK9840-55/CUX from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9840-55/CUX and other electronic components in the MOSFET category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BUK9840-55 N-channel TrenchMOS logic level FET 16 March 2016 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Electrostatically robust due to integrated protection diodes Low conduction losses due to low on-state resistance 3. Applications Automotive and general purpose power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C - - 55 V DS j j I drain current T = 25 C - - 10.7 A D sp P total power dissipation T = 25 C Fig. 4 - - 8.3 W tot sp Static characteristics R drain-source on-state V = 5 V I = 5 A T = 25 C - 30 40 m DSon GS D j resistance Avalanche ruggedness E non-repetitive drain- I = 3.6 A V 25 V R = 50 - - 60 mJ DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energy Scan or click this QR code to view the latest information for this product SOT223

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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