X-On Electronics has gained recognition as a prominent supplier of BUK9E4R4-40B,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9E4R4-40B,127 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9E4R4-40B,127 NXP

BUK9E4R4-40B,127 electronic component of NXP
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Part No.BUK9E4R4-40B,127
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 40V 174A Automotive 3-Pin(3+Tab) I2PAK Rail
Datasheet: BUK9E4R4-40B,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 4.4272 ea
Line Total: USD 35.42 
Availability - 0
MOQ: 8  Multiples: 1
Pack Size: 1
   
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Transistor Polarity
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Id Continuous Drain Current
Pd Power Dissipation
Gate Source Voltage Max
Drain Source On Res
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Type
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Operating Temperature Classification
Drain Source On Volt
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We are delighted to provide the BUK9E4R4-40B,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9E4R4-40B,127 and other electronic components in the MOSFETs category and beyond.

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BUK9E4R4-40B N-channel TrenchMOS logic level FET Rev. 03 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source T 25 C T 175C --40 V V DS j j voltage 1 I drain current V =5V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --254W tot mb dissipation Static characteristics drain-source V =10V I =25A -3.6 4 m R DSon GS D on-state T =25C j resistance V =5V I =25A -3.9 4.4 m GS D T =25C see Figure 11 j see Figure 12 I2PAKBUK9E4R4-40B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 40 V --961mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -24 -nC GD GS D V =32 V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9E4R4-40B I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 BUK9E4R4-40B All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 8 February 2011 2 of 14

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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