X-On Electronics has gained recognition as a prominent supplier of BUK9K29-100E,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9K29-100E,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9K29-100E,115 Nexperia

BUK9K29-100E,115 electronic component of Nexperia
BUK9K29-100E,115 Nexperia
BUK9K29-100E,115 MOSFETs
BUK9K29-100E,115  Semiconductors

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See Product Specifications
Part No. BUK9K29-100E,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET Dual N-channel 100 V 29 mo FET
Datasheet: BUK9K29-100E,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.2625 ea
Line Total: USD 2.26 
Availability - 14889
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
75
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 1
Multiples : 1
1 : USD 3.7642
10 : USD 2.7335
30 : USD 2.18
100 : USD 1.8958
500 : USD 1.7669
1500 : USD 1.7117

14889
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 2.2625
10 : USD 1.524
100 : USD 1.111
500 : USD 0.9207
1000 : USD 0.8272
1500 : USD 0.8261
3000 : USD 0.8184

1025
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 76
Multiples : 1
76 : USD 1.4667
100 : USD 1.401
250 : USD 1.3449
500 : USD 1.2465
1000 : USD 1.2058

1455
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1500
Multiples : 1500
1500 : USD 0.9529
3000 : USD 0.8983
9000 : USD 0.8919

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9K29-100E,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9K29-100E,115 and other electronic components in the MOSFETs category and beyond.

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BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V > 0.5 V 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Start-stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 30 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 68 W tot mb T junction temperature -55 - 175 C j Static characteristics FET1 and FET2 R drain-source on-state V = 5 V I = 5 A T = 25 C Fig. 12 - 25.1 29 m DSon GS D j resistance Dynamic characteristics FET1 and FET2 Q total gate charge I = 10 A V = 80 V V = 10 V - 54 - nC G(tot) D DS GS T = 25 C Fig. 14 Fig. 15 j Q gate-drain charge - 10.9 - nC GDNexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Typ Max Unit Avalanche Ruggedness FET1 and FET2 E non-repetitive drain- I = 30 A V 100 V V = 5 V 1 2 - - 83 mJ DS(AL)S D sup GS source avalanche T = 25 C Fig. 3 j(init) energy 1 Refer to application note AN10273 for further information 2 Single-pulse avalanche rating limited by maximum junction temperature of 175 C 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 8 7 6 5 1 S1 source1 D1 D1 D2 D2 2 G1 gate1 3 S2 source2 4 G2 gate2 5 D2 drain2 S1 G1 S2 G2 6 D2 drain2 mbk725 1 2 3 4 7 D1 drain1 LFPAK56D (SOT1205) 8 D1 drain1 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9K29-100E LFPAK56D Plastic single ended surface mounted package (LFPAK56D) 8 SOT1205 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9K29-100E 9291E BUK9K29-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 March 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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