X-On Electronics has gained recognition as a prominent supplier of BUK9Y25-60E,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y25-60E,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9Y25-60E,115 Nexperia

BUK9Y25-60E,115 electronic component of Nexperia
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Part No.BUK9Y25-60E,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-channel 60 V 25 mo FET
Datasheet: BUK9Y25-60E,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0318 ea
Line Total: USD 1.03 
Availability - 4510
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2827
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 4
Multiples : 1
4 : USD 1.3479
10 : USD 1.3412
25 : USD 1.3346
100 : USD 1.328
250 : USD 1.3213
500 : USD 1.3147
1000 : USD 1.3081

1455
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 181
Multiples : 1
181 : USD 0.7175
500 : USD 0.5577
1000 : USD 0.549
1500 : USD 0.3788
3000 : USD 0.3749
9000 : USD 0.3662
24000 : USD 0.3618

13095
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1500
Multiples : 1500
1500 : USD 0.3986
3000 : USD 0.3945
9000 : USD 0.3857
24000 : USD 0.3813

9
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 0.8031
10 : USD 0.7859
30 : USD 0.7724
100 : USD 0.761

4510
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0318
10 : USD 0.6952
100 : USD 0.5038
500 : USD 0.4147
1500 : USD 0.3355

2827
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 20
Multiples : 1
20 : USD 1.3412
25 : USD 1.3346
100 : USD 1.328
250 : USD 1.3213
500 : USD 1.3147
1000 : USD 1.3081

1455
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 181
Multiples : 1
181 : USD 0.7175

13095
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1500
Multiples : 1500
1500 : USD 0.3933
3000 : USD 0.3894
9000 : USD 0.3822
24000 : USD 0.3779

8730
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1500
Multiples : 1500
1500 : USD 0.3572

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9Y25-60E,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y25-60E,115 and other electronic components in the MOSFETs category and beyond.

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BUK9Y25-60E N-channel 60 V, 25 m logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 34 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 65 W tot mb Static characteristics R drain-source on-state V = 5 V I = 10 A T = 25 C Fig. 11 - 20.8 25 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 10 A V = 48 V - 4.2 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9Y25-60E N-channel 60 V, 25 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y25-60E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y25-60E 92560E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j I drain current T = 25 C V = 5 V Fig. 1 - 34 A D mb GS T = 100 C V = 5 V Fig. 1 - 24 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 135 A DM mb p P total power dissipation T = 25 C Fig. 2 - 65 W tot mb BUK9Y25-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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