BUK9Y30-75B Nexperia

BUK9Y30-75B N-channel TrenchMOS logic level FET Rev. 04 10 April 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Q101 compliant on-state resistance Suitable for logic level gate drive Suitable for thermally demanding sources environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C --75 V DS j j I drain current V =5V T =25 C --34 A D GS mb see Figure 1 and 4 P total power dissipation T =25 C see Figure 2 --85 W tot mb Avalanche ruggedness E non-repetitive I =34 A V 75 V --78 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T =25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -9 -nC GD GS D V =60 V T =25 C DS j see Figure 14 Static characteristics R drain-source on-state V =5V I =15A -25 30 m DSon GS D resistance T =25 C see Figure 12 and j 13NXP Semiconductors BUK9Y30-75B N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source 3 S source G 4 G gate mbb076 S mb D mounting base 1234 connected to drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y30-75B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C-75V DS j j V drain-gate voltage R =20k T 25 C T 175 C- 75 V DGR GS mb mb V gate-source voltage -15 15 V GS I drain current T =25 C V = 5 V see Figure 1 and 4 -34 A D mb GS T = 100 C V = 5 V see Figure 1 -24 A mb GS I peak drain current T =25 C t 10 s pulsed see Figure 4 - 137 A DM mb p P total power dissipation T =25 C see Figure 2 -85 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25 C-34A S mb I peak source current t 10 s pulsed T =25 C - 137 A SM p mb Avalanche ruggedness E non-repetitive I =34A V 75 V R =50 V =5V -78 mJ DS(AL)S D sup GS GS drain-source avalanche T =25 C unclamped j(init) energy 1 2 E repetitive drain-source see Figure 3 --J DS(AL)R 3 avalanche energy 1 Single-pulse avalanche rating limited by maximum junction temperature of 175 C. 2 Repetitive avalanche rating limited by average junction temperature of 170 C. 3 Refer to application note AN10273 for further information. BUK9Y30-75B 4 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 10 April 2008 2 of 13