X-On Electronics has gained recognition as a prominent supplier of BUK9Y6R0-60E MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y6R0-60E MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9Y6R0-60E Nexperia

BUK9Y6R0-60E electronic component of Nexperia
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Part No.BUK9Y6R0-60E
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, N-CH, 60V, 100A, LFPAK
Datasheet: BUK9Y6R0-60E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.1744 ea
Line Total: USD 2.17 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 2.1744
10 : USD 1.7478
100 : USD 1.3841
500 : USD 1.1261
1000 : USD 1.0835

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
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We are delighted to provide the BUK9Y6R0-60E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y6R0-60E and other electronic components in the MOSFETs category and beyond.

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BUK9Y6R0-60E N-channel 60 V, 6.0 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 5 V T = 25 C Fig. 1 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 195 W tot mb Static characteristics R drain-source on-state V = 5 V I = 25 A T = 25 C Fig. 11 - 4.6 6 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 48 V - 11.1 - nC GD GS D DS Fig. 13 Fig. 14 1 Continuous current is limited by package. Scan or click this QR code to view the latest information for this product LFPAK56NXP Semiconductors BUK9Y6R0-60E N-channel 60 V, 6.0 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y6R0-60E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y6R0-60E 96E060 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j I drain current T = 25 C V = 5 V Fig. 1 3 - 100 A D mb GS T = 100 C V = 5 V Fig. 1 - 85 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 479 A DM mb p P total power dissipation T = 25 C Fig. 2 - 195 W tot mb BUK9Y6R0-60E All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved Product data sheet 8 May 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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