BUK9Y19-75B NXP

BUK9Y19-75B N-channel TrenchMOS logic level FET Rev. 04 13 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids DC-to-DC converters Transmission control Engine management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --75 V DS j j voltage I drain current V =5V T =25C --48.2A D GS mb see Figure 1 see Figure 4 P total power T = 25 C see Figure 2 --106W tot mb dissipation Static characteristics R drain-source V =5V I =20A -15.919 m DSon GS D on-state T =25C see Figure 13 j resistance V =10V I =20A -14.718 m GS D T =25C jBUK9Y19-75B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =48.2 A V 75 V --121mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =20A -12 - nC GD GS D V =60 V T =25C DS j see Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D mb 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y19-75B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK9Y19-75B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 13 April 2010 2 of 14