X-On Electronics has gained recognition as a prominent supplier of BUK9Y22-30B,115 MOSFET across the USA, India, Europe, Australia, and various other global locations. BUK9Y22-30B,115 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BUK9Y22-30B,115 Nexperia

BUK9Y22-30B,115 electronic component of Nexperia
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Part No.BUK9Y22-30B,115
Manufacturer: Nexperia
Category: MOSFET
Description: MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
Datasheet: BUK9Y22-30B,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.2171
10 : USD 1.071
100 : USD 0.5973
500 : USD 0.4723
1000 : USD 0.3782
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
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Technology
Number of Channels
Configuration
Transistor Type
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Cnhts
Hts Code
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We are delighted to provide the BUK9Y22-30B,115 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y22-30B,115 and other electronic components in the MOSFET category and beyond.

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BUK9Y22-30B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage I drain current V =5V T =25C --37.7A D GS mb see Figure 1 see Figure 4 P total power T = 25 C see Figure 2 --59.4W tot mb dissipation Static characteristics R drain-source V =5V I =20A - 1722m DSon GS D on-state T =25C see Figure 12 j resistance see Figure 13 V =10V I =20A -13.519 m GS D T =25C jBUK9Y22-30B Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =37.7 A V 30 V --47 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =20A -4.5 -nC GD GS D V =24 V see Figure 14 DS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mb D mounting base connected to 1234 drain mbl798 S1 S2 S3 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y22-30B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK9Y22-30B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 7 April 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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