STH140N6F7-6 STMicroelectronics

STH140N6F7-2, STH140N6F7-6 N-channel 60 V, 0.0028 typ., 80 A STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH140N6F7-2 60 V 0.0032 80 A 158 W STH140N6F7-6 Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Figure 1: Internal schematic diagram Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH140N6F7-2 140N6F7 HPAK-2 Tape and Reel STH140N6F7-6 140N6F7 HPAK-6 Tape and Reel July 2015 DocID025089 Rev 3 1/19 www.st.com This is information on a product in full production. Contents STH140N6F7-2, STH140N6F7-6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 HPAK-2 package information ......................................................... 10 4.2 HPAK-6 package information ......................................................... 13 4.3 HPAK packing information ............................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID025089 Rev 3