STH145N8F7-2AG STMicroelectronics

STH145N8F7-2AG Automotive-grade N-channel 80 V, 3.3 m typ., 90 A STripFET F7 Power MOSFET in a HPAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH145N8F7-2AG 80 V 4 m 90 A 200 W Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Figure 1: Internal schematic diagram Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STH145N8F7-2AG 145N8F7 HPAK-2 Tape and reel June 2015 DocID027933 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STH145N8F7-2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 HPAK-2 package information ......................................................... 10 5 Packing information ...................................................................... 13 6 Revision history ............................................................................ 15 2/16 DocID027933 Rev 1