STFW6N120K3 STMicroelectronics

STFW6N120K3, STP6N120K3, STW6N120K3 N-channel 1200 V, 1.95 typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages Datasheet production data Features R DS(on) Order codes V I P DSS D tot max 3 2 1 STFW6N120K3 1200 V < 2.4 6 A 63 W TO-3PF STP6N120K3 1200 V < 2.4 6 A 150 W TAB STW6N120K3 1200 V < 2.4 6 A 150 W 100% avalanche tested 3 Extremely large avalanche performance 2 3 1 2 1 Gate charge minimized TO-220 TO-247 Very low intrinsic capacitances Zener-protected Figure 1. Internal schematic diagram Applications Switching applications D(2,TAB) Description These SuperMESH3 Power MOSFETs are the result of improvements applied to G(1) STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STFW6N120K3 TO-3PF STP6N120K3 6N120K3 TO-220 Tube STW6N120K3 TO-247 November 2012 Doc ID 15572 Rev 3 1/17 This is information on a product in full production. www.st.com 17Contents STFW6N120K3, STP6N120K3, STW6N120K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 16 2/17 Doc ID 15572 Rev 3