STFW69N65M5 STMicroelectronics

STFW69N65M5 STW69N65M5 N-channel 650 V, 0.037 typ., 58 A MDmesh V Power MOSFET in TO-3PF and TO-247 packages Datasheet production data Features Order codes V T R max I DSS Jmax DS(on) D STFW69N65M5 710 V < 0.045 58 A STW69N65M5 111 Worldwide best R * area DS(on) 3 3 Higher V rating and high dv/dt capability 2 DSS 2 1 1 Excellent switching performance TO-247 100% avalanche tested TO-3PF Applications Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially 3 suitable for applications which require superior power density and outstanding efficiency. - V Table 1. Device summary Order codes Marking Package Packaging STFW69N65M5 TO-3PF 69N65M5 Tube STW69N65M5 TO-247 September 2012 Doc ID 022906 Rev 2 1/16 This is information on a product in full production. www.st.com 16Contents STFW69N65M5, STW69N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 Doc ID 022906 Rev 2