STH175N4F6-2AG, STH175N4F6-6AG Automotive-grade N-channel 40 V, 1.9 m typ.,120 A STripFET F6 Power MOSFETs in HPAK-2 and HPAK-6 packages Datasheet - production data Features Order codes V R max I DS DS(on) D TAB TAB STH175N4F6-2AG 40 V 2.4 m 120 A STH175N4F6-6AG 7 2 3 Designed for automotive applications and 1 1 AEC-Q101 qualified 2 2 H PAK-2 H PAK-6 Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1. Internal schematic diagram Applications D(TAB) D(TAB) Switching applications Description These devices are N-channel Power MOSFETs G(1) G(1) developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low R in all DS(on) S(2, 3) S(2, 3, 4, 5, 6, 7) packages. 2 2 H PAK-6 H PAK-2 AM14551V1 Table 1. Device summary Order codes Marking Package Packaging 2 STH175N4F6-2AG H PAK-2 175N4F6 Tape and reel 2 STH175N4F6-6AG H PAK-6 February 2015 DocID027534 Rev 1 1/18 This is information on a product in full production. www.st.comContents STH175N4F6-2AG, STH175N4F6-6AG Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Package information . 8 2 3.1 H PAK-2 package information 9 2 3.2 H PAK-6 package information . 12 4 Packing information 15 5 Revision history . 17 2/18 DocID027534 Rev 1