X-On Electronics has gained recognition as a prominent supplier of STH315N10F7-2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STH315N10F7-2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STH315N10F7-2 STMicroelectronics

STH315N10F7-2 electronic component of STMicroelectronics
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Part No.STH315N10F7-2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET Automotive N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-2 package
Datasheet: STH315N10F7-2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 3.1765 ea
Line Total: USD 3176.5 
Availability - 4850
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
19
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 4.2891
30 : USD 4.1449

4850
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 3.1765
2000 : USD 3.145

1477
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 5
Multiples : 1
5 : USD 8.316
10 : USD 5.8275
50 : USD 4.4258
100 : USD 4.347
200 : USD 4.0792
500 : USD 3.6855
1000 : USD 3.4808

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Tradename
Configuration
Series
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the STH315N10F7-2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STH315N10F7-2 and other electronic components in the MOSFETs category and beyond.

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STH315N10F7-2, STH315N10F7-6 Datasheet Automotive-grade N-channel 100 V, 2.1 m typ., 180 A STripFET F7 Power MOSFETs in an HPAK 2 and HPAK 6 packages Features V R max. I Order code DS DS(on) D TAB TAB STH315N10F7-2 100 V 2.3 m 180 A 7 2 STH315N10F7-6 3 1 1 2 H PAK-2 2 H PAK-6 AEC-Q101 qualified Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss D(TAB) D(TAB) High avalanche ruggedness Applications G(1) G(1) Switching applications S(2, 3) S(2, 3, 4, 5, 6, 7) for for Description 2 2 H PAK-2 H PAK-6 N-CHG1DTABS23 2 6 These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status STH315N10F7-2 STH315N10F7-6 Product summary Order code STH315N10F7-2 Marking 315N10F7 Package HPAK-2 Packing Tape and reel Order code STH315N10F7-6 Marking 315N10F7 Package HPAK-6 Packing Tape and reel DS9870 - Rev 5 - May 2021 www.st.com For further information contact your local STMicroelectronics sales office.STH315N10F7-2, STH315N10F7-6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 100 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 180 A C D (1) Drain current (continuous) at T = 100 C I 180 A D c (2) I Drain current (pulsed) 720 A DM P Total dissipation at T = 25 C TOT C 315 W Derating factor 2.1 W/C (3) E Single pulse avalanche energy 1 J AS T Operating junction temperature range j -55 to 175 C T Storage temperature range stg 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting T =25 C, I =60 A, V =50 V j D DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.48 C/W thJC (1) R Thermal resistance, junction-to-board 35 C/W thJB 1. When mounted on 1 inch FR-4, 2 Oz copper board. DS9870 - Rev 5 page 2/17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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