STH47N60DM6-2AG STMicroelectronics

STH47N60DM6-2AG Datasheet Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmesh DM6 Power MOSFET in an HPAK-2 package Features TAB V R max. I Order code DS DS(on) D STH47N60DM6-2AG 600 V 80 m 36 A 2 3 1 AEC-Q101 qualified Fast-recovery body diode 2 H PAK-2 Lower R per area vs previous generation DS(on) Low gate charge, input capacitance and resistance D(TAB) 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(2,3) NCHG1DTABS23TZ Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STH47N60DM6-2AG Product summary Order code STH47N60DM6-2AG Marking 47N60DM6 Package HPAK-2 Packing Tape and reel DS12261 - Rev 2 - March 2019 www.st.com For further information contact your local STMicroelectronics sales office.STH47N60DM6-2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 36 A D C I Drain current (continuous) at T = 100 C 23 A D C (1) I Drain current (pulsed) 137 A D P Total power dissipation at T = 25 C 250 W TOT C (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area 2. I 36 A, di/dt 800 A/s, V < V , V = 480 V SD DS (peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 thj-case C/W (1) R Thermal resistance junction-pcb 30 thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 7 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 700 mJ AS (starting T = 25C, I = I , V = 100 V) j D AR DD DS12261 - Rev 2 page 2/15