PSMN1R6-30MLHX Nexperia

PSMN1R6-30MLH N-channel 30 V, 1.9 m, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 12 November 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low R , low I leakage and high efficiency. Rated to 160 A DSon DSS and optimized for DC load switch and hot-swap applications. 2. Features and benefits Optimized for low R DSon Low leakage < 1 A at 25 C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive 160 A rated High reliability copper-clip bonded and solder die attach LFPAK33 package Qualified to 175 C Exposed leads for optimal visual solder inspection 3. Applications DC switch / load switch USB-PD and fast-charge Battery protection OR-ing and hot-swap Synchronous rectifier in AC-DC and DC-DC applications Brushed and BLDC (brushless) motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current V = 10 V; T = 25 C; Fig. 2 [1] - - 160 A D GS mb P total power dissipation T = 25 C; Fig. 1 - - 106 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V; I = 25 A; T = 25 C; - 1.6 1.9 m DSon GS D j resistance Fig. 10 V = 4.5 V; I = 25 A; T = 25 C; - 2 2.6 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A; V = 15 V; V = 4.5 V; 1.3 7 14 nC GD D DS GS Fig. 12; Fig. 13Nexperia PSMN1R6-30MLH N-channel 30 V, 1.9 m, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Symbol Parameter Conditions Min Typ Max Unit Q total gate charge I = 25 A; V = 15 V; V = 10 V; 18 41 68 nC G(tot) D DS GS Fig. 12; Fig. 13 Source-drain diode S softness factor I = 20 A; dI /dt = -100 A/s; V = 0 V; - 0.7 - S S GS V = 15 V; Fig. 16 DS [1] 160A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base; connected to drain 1 2 3 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R6-30MLH LFPAK33 Plastic, single ended surface mounted package (LFPAK33); 8 SOT1210 leads; 0.65 mm pitch 7. Marking Table 4. Marking codes Type number Marking code PSMN1R6-30MLH 1H630L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C; R = 20 k - 30 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C; Fig. 1 - 106 W tot mb I drain current V = 10 V; T = 25 C; Fig. 2 [1] - 160 A D GS mb V = 10 V; T = 100 C; Fig. 2 - 116 A GS mb I peak drain current pulsed; t 10 s; T = 25 C; Fig. 3 - 656 A DM p mb PSMN1R6-30MLH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 12 November 2019 2 / 12