PSMN3R5-40YSDX Nexperia

PSMN3R5-40YSD N-channel 40 V, 3.5 m, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 2 October 2018 Product data sheet 1. General description 120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits 120 A capability Avalanche rated, 100% tested at I = 120 A (AS) NextPower-S3 technology delivers superfast switching with soft recovery Low Q , Q and Q for high system efficiency and low EMI designs RR G GD Schottky-Plus body-diode, gives soft switching without the associated high I leakage DSS Low V Schottky-like body-diode SD Tighter V limits for improved paralleling GS(th) Wide Safe Operating Area (SOA) for reliable linear mode operation High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 175 C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints 3. Applications Synchronous rectification DC-to-DC converters High performance and high efficiency power supplies BLDC motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 115 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 3 3.5 m DSon GS D j resistance Fig. 10 Dynamic characteristicsNexperia PSMN3R5-40YSD N-channel 40 V, 3.5 m, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Symbol Parameter Conditions Min Typ Max Unit Q total gate charge I = 25 A V = 20 V V = 10 V - 31 44 nC G(tot) D DS GS Fig. 12 Fig. 13 Q gate-drain charge - 5 10 nC GD 1 120A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S 1 2 3 4 mb D mounting base connected to drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R5-40YSD LFPAK56 plastic, single-ended surface-mounted package 4 terminals SOT669 Power-SO8 7. Marking Table 4. Marking codes Type number Marking code PSMN3R5-40YSD 3D5S40Y 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V peak drain-source t 20 ns f 500 kHz E 200 nJ - 45 V DSM p DS(AL) voltage pulsed V drain-gate voltage 25 C T 175 C R = 20 k - 40 V DGR j GS V gate-source voltage T 175 C -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 115 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 120 A D GS mb V = 10 V T = 100 C Fig. 2 - 93 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 526 A DM p mb PSMN3R5-40YSD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 2 October 2018 2 / 13