X-On Electronics has gained recognition as a prominent supplier of PSMN3R8-100BS MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN3R8-100BS MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN3R8-100BS NXP

PSMN3R8-100BS electronic component of NXP
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Part No.PSMN3R8-100BS
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET, N-CH, 100V, 120A, D2PAK
Datasheet: PSMN3R8-100BS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0862 ea
Line Total: USD 2.09 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 2.0862
25 : USD 1.9764
100 : USD 1.7019
250 : USD 1.525
500 : USD 1.3359

   
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PSMN3R8-100BS from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN3R8-100BS and other electronic components in the MOSFETs category and beyond.

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PSMN3R8-100BS N-channel 100 V 3.9 m standard level MOSFET in D2PAK Rev. 2 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10V see Figure 1 --120 A D mb GS P total power dissipation T =25C see Figure 2 --306 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A T = 100 C -5.9 6.9 m DSon GS D j resistance see Figure 12 see Figure 13 =10V I =25A T =25C - 3.28 3.9 m V GS D j see Figure 12 see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =75A V =50V -49 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 170 - nC G(tot) Avalanche ruggedness E non-repetitive V =10V T =25C I =120 A --537 mJ DS(AL)S GS j(init) D drain-source V 100 V R =50 Unclamped sup GS avalanche energy 1 Continuous current is limited by package. D2PAKPSMN3R8-100BS NXP Semiconductors N-channel 100 V 3.9 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R8-100BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -100V DGR j j GS V gate-source voltage -20 20 V GS 1 I drain current V =10V T = 100 C see Figure 1 -120A D GS j 1 V =10V T =25C see Figure 1 -120A GS mb I peak drain current pulsed t 10 s T =25C see Figure 3 -680A DM p mb P total power dissipation T =25C see Figure 2 -306W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode 1 I source current T =25C -120A S mb I peak source current pulsed t 10 s T =25C - 680 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I = 120 A -537mJ DS(AL)S GS j(init) D avalanche energy V 100 V R =50 Unclamped sup GS 1 Continuous current is limited by package. PSMN3R8-100BS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 29 February 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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