X-On Electronics has gained recognition as a prominent supplier of PSMN3R9-25MLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN3R9-25MLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN3R9-25MLC,115 Nexperia

PSMN3R9-25MLC,115 electronic component of Nexperia
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Part No.PSMN3R9-25MLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-channel MOSFET logic level LFPAK33
Datasheet: PSMN3R9-25MLC,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7997 ea
Line Total: USD 0.8 
Availability - 1343
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1343
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7997
10 : USD 0.5445
100 : USD 0.3839
500 : USD 0.3146
1500 : USD 0.2772
3000 : USD 0.2409
9000 : USD 0.2398

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the PSMN3R9-25MLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN3R9-25MLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN3R9-25MLC N-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low parasitic inductance and Ultra low QG, QGD, & QOSS for high resistance system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T = 25C --25 V V DS j 1 drain current T =25C V =10V see Figure 1 --70 A I D mb GS total power dissipation T = 25 C see Figure 2 --69 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =4.5 V I =25A T =25C - 4.85 5.55 m R DSon GS D j resistance see Figure 10 V =10V I =25A T =25C - 3.65 4.15 m GS D j see Figure 10 Dynamic characteristics Q gate-drain charge V =4.5 V I =25A V =12.5V -2.3 -nC GD GS D DS see Figure 12 see Figure 13 total gate charge V =4.5 V I =25A V =12.5V -9.7 -nC Q G(tot) GS D DS see Figure 12 see Figure 13 1 Continuous current is limited by package.PSMN3R9-25MLC Nexperia N-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower Technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 142 3 SOT1210 (LFPAK33) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R9-25MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33) SOT1210 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25C - 25 V DS j V gate-source voltage -20 20 V GS 1 I drain current V =10V T =25C see Figure 1 -70 A D GS mb V =10V T = 100 C see Figure 1 -69 A GS mb I peak drain current pulsed t 10 s T =25C - 390 A DM p mb see Figure 4 P total power dissipation T =25C see Figure 2 -69 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 230 - V ESD Source-drain diode I source current T =25C - 63 A S mb I peak source current pulsed t 10 s T = 25 C - 390 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =70A - 34.5 mJ DS(AL)S GS j(init) D avalanche energy V 25 V R =50 unclamped sup GS see Figure 3 1 Continuous current is limited by package. PSMN3R9-25MLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 4 15 June 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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