PD - 90551D
IRFF9230
JANTX2N6851
REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6851
HEXFET TRANSISTORS JANS2N6851
THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564
200V, P-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFF9230 -200V 0.80 -4.0A
The HEXFET technology is the key to International
Rectifiers advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
State of the Art design achieves: very low on-state resis-
TO-39
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
Features:
age control, very fast switching, ease of parelleling
Repetitive Avalanche Ratings
and temperature stability of the electrical parameters.
Dynamic dv/dt Rating
They are well suited for applications such as switch-
Hermetically Sealed
ing power supplies, motor controls, inverters, chop-
Simple Drive Requirements
pers, audio amplifiers and high energy pulse circuits.
Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
I @ V = -10V, T = 25C Continuous Drain Current -4.0
D GS C
A
I @ V = -10V, T = 100C Continuous Drain Current -2.4
D GS C
I Pulsed Drain Current -16
DM
P @ T = 25C Max. Power Dissipation 25 W
D C
Linear Derating Factor 0.20 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 75 mJ
AS
I Avalanche Current A
AR
E Repetitive Avalanche Energy mJ
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T Operating Junction -55 to 150
J
o
T Storage Temperature Range C
STG
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98(typical) g
For footnotes refer to the last page
www.irf.com 1
04/20/01IRFF9230
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV Drain-to-Source Breakdown Voltage -200 V V = 0V, I = -1.0mA
DSS GS D
BV / T Temperature Coefficient of Breakdown -0.22 V/C Reference to 25C, I = -1.0mA
DSS J D
Voltage
R Static Drain-to-Source On-State 0.80 V = -10V, I = -2.4A
DS(on) GS D
Resistance 1.68 V =-10V, I =-4.0A
GS D
V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250 A
GS(th) DS GS D
g Forward Transconductance 2.2 S ( ) V > -15V, I = -2.4A
fs DS DS
I Zero Gate Voltage Drain Current -25 V = -160V, V =0V
DSS DS GS
-250 A V = -160V
DS
V = 0V, T = 125C
GS J
I Gate-to-Source Leakage Forward -100 V = -20V
GSS GS
I Gate-to-Source Leakage Reverse 100 nA V = 20V
GSS GS
Q Total Gate Charge 14.7 34.8 V =-10V, ID = -4.0A
g GS
Q Gate-to-Source Charge 0.8 7.0 nC V = -100V
gs DS
Q Gate-to-Drain (Miller) Charge 5.0 17
gd
t Turn-On Delay Time 50 V = -100V, I = -4.0A,
d(on) DD D
t Rise Time 100 V =-10V,R =7.5
r GS G
ns
t Turn-Off Delay Time 100
d(off)
t Fall Time 80
f
L L Total Inductance 7.0
Measured from drain lead (6mm/0.25in. from
S + D nH
package) to source lead (6mm/0.25in. from
package)
C Input Capacitance 700 V = 0V, V = -25V
iss GS DS
C Output Capacitance 200 pF f = 1.0MHz
oss
C Reverse Transfer Capacitance 40
rss
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I Continuous Source Current (Body Diode) -4.0
S
A
I Pulse Source Current (Body Diode) -20
SM
V Diode Forward Voltage -6.0 V T = 25C, I =-4.0A, V = 0V
j
SD S GS
t Reverse Recovery Time 400 nS Tj = 25C, I = -4.0A, di/dt -100A/ s
rr F
Q Reverse Recovery Charge 4.0 C V -50V
RR DD
t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on S D
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R Junction-to-Case 5.0
thJC
C/W
R Junction-to-Ambient 175 Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com