STP46N60M6 STMicroelectronics

STP46N60M6 Datasheet N-channel 600 V, 68 m typ., 36 A, MDmesh M6 Power MOSFET in a TO220 package Features V R max. I Order code DS DS(on) D TAB STP46N60M6 600 V 80 m 36 A Reduced switching losses 3 2 Lower R per area vs previous generation 1 DS(on) TO-220 Low gate input resistance 100% avalanche tested Zener-protected D(2, TAB) Applications Switching applications G(1) LLC converters Boost PFC converters S(3) AM01475V1 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with one of the DS(on) most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STP46N60M6 Product summary Order code STP46N60M6 Marking 46N60M6 Package TO-220 Packing Tube DS12394 - Rev 3 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STP46N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 36 case I A D Drain current (continuous) at T = 100 C 23 case (1) I Drain current (pulsed) 126 A D P Total power dissipation at T = 25 C 250 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 100 dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 36 A, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 5.2 A AR (pulse width limited by T ) Jmax Single pulse avalanche energy E 760 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS12394 - Rev 3 page 2/13