X-On Electronics has gained recognition as a prominent supplier of STP46N60M6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP46N60M6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP46N60M6 STMicroelectronics

STP46N60M6 electronic component of STMicroelectronics
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Part No.STP46N60M6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Channel 600V 36A 3-Pin TO-220 Tube
Datasheet: STP46N60M6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 4.6263 ea
Line Total: USD 4626.3 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1000
Multiples : 1
1000 : USD 5.7506
2000 : USD 5.6927
2500 : USD 5.636
3000 : USD 5.5793
4000 : USD 5.5238
5000 : USD 5.0526
10000 : USD 5.0022
20000 : USD 4.9518
50000 : USD 4.9027

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 4.6263

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 9.9393
10 : USD 6.5347

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the STP46N60M6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP46N60M6 and other electronic components in the MOSFETs category and beyond.

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STP46N60M6 Datasheet N-channel 600 V, 68 m typ., 36 A, MDmesh M6 Power MOSFET in a TO220 package Features V R max. I Order code DS DS(on) D TAB STP46N60M6 600 V 80 m 36 A Reduced switching losses 3 2 Lower R per area vs previous generation 1 DS(on) TO-220 Low gate input resistance 100% avalanche tested Zener-protected D(2, TAB) Applications Switching applications G(1) LLC converters Boost PFC converters S(3) AM01475V1 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with one of the DS(on) most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STP46N60M6 Product summary Order code STP46N60M6 Marking 46N60M6 Package TO-220 Packing Tube DS12394 - Rev 3 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STP46N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 36 case I A D Drain current (continuous) at T = 100 C 23 case (1) I Drain current (pulsed) 126 A D P Total power dissipation at T = 25 C 250 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 100 dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 36 A, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 5.2 A AR (pulse width limited by T ) Jmax Single pulse avalanche energy E 760 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS12394 - Rev 3 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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