STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4 - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESHPower MOSFET TYPE V R I Pw DSS DS(on) D STP4NK50Z 500 V < 2.7 3A 45 W STP4NK50ZFP 500 V < 2.7 3A 20 W STD4NK50Z 500 V < 2.7 3A 45 W STD4NK50Z-1 500 V < 2.7 3A 45 W 3 TYPICAL R (on) = 2.3 2 DS 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 VERY GOOD MANUFACTURING 3 2 1 REPEATIBILITY 1 IPAK DPAK DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip- INTERNAL SCHEMATIC DIAGRAM based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP4NK50Z P4NK50Z TO-220 TUBE STP4NK50ZFP P4NK50ZFP TO-220FP TUBE STD4NK50ZT4 D4NK50Z DPAK TAPE & REEL STD4NK50Z-1 D4NK50Z IPAK TUBE December 2002 1/13STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STD4NK50Z STP4NK50Z STP4NK50ZFP STD4NK50Z-1 V Drain-source Voltage (V =0) 500 V DS GS V Drain-gate Voltage (R =20k) 500 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 3 3 (*) 3 (*) A D C I Drain Current (continuous) at T = 100C 1.9 1.9 (*) 1.9 (*) A D C I ( ) Drain Current (pulsed) 12 12 (*) 12 (*) A DM P Total Dissipation at T = 25C 45 20 45 W TOT C Derating Factor 0.36 0.16 0.36 W/C V Gate source ESD(HBM-C=100pF, R=1.5K) 2800 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns V Insulation Withstand Voltage (DC) - 2500 - V ISO T j Operating Junction Temperature -55to150 C T Storage Temperature stg ( ) Pulse width limited by safe operating area (1) I 3A,di/dt 200A/s, V V ,T T SD DD (BR)DSS j JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA DPAK TO-220 TO-220FP IPAK Rthj-case Thermal Resistance Junction-case (Max) 2.78 6.25 2.78 C/W Rthj-amb Thermal Resistance Junction-ambient (Max) 62.5 100 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 3A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 120 mJ AS (starting T = 25 C, I =I ,V =50V) j D AR DD GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13