X-On Electronics has gained recognition as a prominent supplier of STP42N65M5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP42N65M5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP42N65M5 STMicroelectronics

STP42N65M5 electronic component of STMicroelectronics
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Part No.STP42N65M5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; TO220-3
Datasheet: STP42N65M5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.8425 ea
Line Total: USD 7.84 
Availability - 1398
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
26
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 16.128
2 : USD 11.452
5 : USD 10.822
250 : USD 10.71

1398
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 7.8425
25 : USD 6.9247

960
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 9.3275
10 : USD 9.2463
50 : USD 8.06
100 : USD 7.8812
200 : USD 7.7025
500 : USD 7.5238

   
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Technology
Kind Of Package
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Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the STP42N65M5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP42N65M5 and other electronic components in the MOSFETs category and beyond.

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STB42N65M5, STF42N65M5, STI42N65M5 STP42N65M5, STW42N65M5 Datasheet N-channel 650 V, 70 m typ., 33 A, MDmesh M5 Power MOSFETs in DPAK, TO-220FP, IPAK, TO-220 and TO-247 packages Features TAB V T R max. I Order codes Package DS Jmax DS(on) D 3 3 1 2 STB42N65M5 DPAK 2 1 D PAK TO-220FP STF42N65M5 TO-220FP TAB STI42N65M5 710 V 79 m 33 A IPAK STP42N65M5 TO-220 3 2 2 1 I PAK STW42N65M5 TO-247 TAB Extremely low R DS(on) Low gate charge and input capacitance 3 3 2 Excellent switching performance 2 1 1 TO-220 TO-247 100% avalanche tested D(2, TAB) Applications Switching applications G(1) Description These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal S(3) layout. The resulting products offer extremely low on-resistance, making them AM01475v1 noZen particularly suitable for applications requiring high power and superior efficiency. Product status STB42N65M5 STF42N65M5 STI42N65M5 STP42N65M5 STW42N65M5 DS6033 - Rev 4 - May 2019 www.st.com For further information contact your local STMicroelectronics sales office.STB42N65M5, STF42N65M5, STI42N65M5, STP42N65M5, STW42N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, IPAK, TO-220FP TO-220, TO-247 V Gate-source voltage 25 V GS (1) Drain current (continuous) at T = 25 C 33 33 A C I D (1) Drain current (continuous) at T = 100 C 20.8 20.8 A C (2) I Drain current (pulsed) 132 132 A DM P Total power dissipation at T = 25 C 190 40 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three V 2500 V ISO leads to external heat sink (t = 1 s T = 25 C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 33 A, di/dt 400 A/s, V = 400 V, V < V . SD DD DS(peak) (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK IPAK TO-220 TO-247 TO-220FP Thermal resistance R 0.66 3.1 C/W thj-case junction-case Thermal resistance R thj-amb 62.5 50 62.5 C/W junction-ambient Thermal resistance (1) R 30 C/W thj-pcb junction-pcb 1. When mounted on an 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 11 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 950 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS6033 - Rev 4 page 2/25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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