STP360N4F6 STMicroelectronics

STI360N4F6, STP360N4F6 Automotive-grade N-channel 40 V, 1.46 m typ., 120 A STripFET F6 Power MOSFETs in IPAK and TO-220 packages Datasheet - production data Features Order codes V R max. I DS DS(on) D TAB TAB STI360N4F6 40 V 1.8 m 120 A STP360N4F6 3 Designed for automotive applications and 3 2 2 1 1 AEC-Q101 qualified Very low on-resistance IPAK TO-220 Low gate charge High avalanche ruggedness Low gate drive power loss Figure 1. Internal schematic diagram Applications Switching applications % 7 Description These devices are N-channel Power MOSFETs * developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low R in all DS(on) packages. 6 0 Y Table 1. Device summary Order codes Marking Packages Packing STI360N4F6 IPAK 360N4F6 Tube STP360N4F6 TO-220 December 2015 DocID023419 Rev 2 1/14 This is information on a product in full production. www.st.comContents STI360N4F6, STP360N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 4.1 IPAK package information . 9 4.2 TO-220 package information .11 5 Revision history . 13 2/14 DocID023419 Rev 2