X-On Electronics has gained recognition as a prominent supplier of STP33N60M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP33N60M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP33N60M2 STMicroelectronics

STP33N60M2 electronic component of STMicroelectronics
STP33N60M2 STMicroelectronics
STP33N60M2 MOSFETs
STP33N60M2  Semiconductors

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See Product Specifications
Part No. STP33N60M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh II
Datasheet: STP33N60M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.6075 ea
Line Total: USD 1607.5 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 2.2698

0
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 10.0696
10 : USD 8.7168
100 : USD 7.1417
500 : USD 6.0795
1000 : USD 5.1273
2000 : USD 4.871

0
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 50
Multiples : 50
50 : USD 3.18
150 : USD 2.9444
250 : USD 2.9444
750 : USD 2.9444
1250 : USD 2.9444

0
Ship by Tue. 14 Jan to Fri. 17 Jan
MOQ : 1
Multiples : 1
1 : USD 7.1258
10 : USD 6.9583
30 : USD 6.8476
100 : USD 6.7368

0
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 6.6429
10 : USD 4.2874
25 : USD 3.9424
100 : USD 3.5868
500 : USD 3.1162
1000 : USD 2.9698

0
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 50
Multiples : 50
50 : USD 2.7471
500 : USD 2.6921

0
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 1.6075
2000 : USD 1.5252
4000 : USD 1.4223
6000 : USD 1.3939

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP33N60M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP33N60M2 and other electronic components in the MOSFETs category and beyond.

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STF33N60M2, STI33N60M2 STP33N60M2, STW33N60M2 Datasheet N-channel 600 V, 0.108 typ., 26 A, MDmesh M2 Power MOSFETs 2 in TO220FP, I PAK, TO-220 and TO-247 packages TAB Features V T R max. I Order codes Package DS Jmax DS(on) D 3 2 3 1 STF33N60M2 TO-220FP 2 1 2 TO-220FP I PAK STI33N60M2 IPAK 650 V 0.125 26 A TAB STP33N60M2 TO-220 STW33N60M2 TO-247 3 Extremely low gate charge 2 1 Excellent output capacitance (C ) profile TO-220 TO-247 OSS 100% avalanche tested ( ) D 2, TAB Zener-protected Applications G ( 1 ) Switching applications LLC converters, resonant converters S ( 3 ) AM15572V1 Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 DS9497 - Rev 3 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 I PAK, TO-220, TO-220FP TO-247 V Gate-source voltage 25 V GS (1) Drain current (continuous) at T = 25 C 26 26 A C I D (1) Drain current (continuous) at T = 100 C 16 16 A C (2) (1) I Drain current (pulsed) 104 104 A DM P Total power dissipation at T = 25 C 35 190 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns Insulation withstand voltage (RMS) from all three V leads to external heat sink 2500 V ISO (t = 1 s, T = 25 C) C T Storage temperature range stg -50 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width is limited by safe operating area. 3. I 26 A, di/dt 400 A/s, V < V , V = 400 V SD DS peak (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Value 2 Symbol Parameter Unit I PAK TO-220FP TO-247 TO-220 R Thermal resistance junction-case 3.6 0.66 C/W thj-case R Thermal resistance junction-ambient 62.5 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 450 mJ AS j D AR DD DS9497 - Rev 3 page 2/20

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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