STP33N60M6 STMicroelectronics

STP33N60M6 Datasheet N-channel 600 V, 105 m typ., 25 A, MDmesh M6 Power MOSFET in a TO-220 package Features Order code V R max. I DS DS(on) D TAB STP33N60M6 600 V 125 m 25 A Reduced switching losses 3 2 Lower R per area vs previous generation 1 DS(on) TO-220 Low gate input resistance 100% avalanche tested Zener-protected D(2, TAB) Applications Switching applications G(1) LLC converters Boost PFC converters S(3) AM01475V1 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly Product status link experience for maximum end-application efficiency. STP33N60M6 Product summary Order code STP33N60M6 Marking 33N60M6 Package TO-220 Packing Tube DS12640 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STP33N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 25 case I A D Drain current (continuous) at T = 100 C 15.8 case (1) I Drain current (pulsed) 78 A D P Total dissipation at T = 25 C 190 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 25 A, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.66 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 4 A AR (pulse width limited by T ) Jmax Single pulse avalanche energy E 500 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD DS12640 - Rev 2 page 2/13