NVMFD5C668NL MOSFET Power, Dual N-Channel 60 V, 6.5 m , 68 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D NVMFD5C668NLWF Wettable Flank Option for Enhanced Optical 6.5 m 10 V 60 V Inspection 68 A 9.2 m 4.5 V AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant Dual NChannel MAXIMUM RATINGS (T = 25C unless otherwise noted) J D1 D2 Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS G1 G2 Continuous Drain T = 25C I 68 A C D Current R JC T = 100C 48 (Notes 1, 2, 3) C S1 S2 Steady State Power Dissipation T = 25C P 57.5 W C D R (Notes 1, 2) JC T = 100C 29 C MARKING DIAGRAM Continuous Drain T = 25C I 15.5 A A D Current R JA D1 D1 T = 100C 11 (Notes 1, 2, 3) A Steady S1 D1 1 State Power Dissipation T = 25C P 3.0 W G1 D1 A D XXXXXX DFN8 5x6 R (Notes 1 & 2) JA S2 AYWZZ D2 T = 100C 1.5 (SO8FL) A G2 D2 CASE 506BT Pulsed Drain Current T = 25C, t = 10 s I 454 A A p DM D2 D2 Operating Junction and Storage Temperature T , T 55 to C J stg XXXXXX = 5C668L (NVMFD5C668NL) or + 175 668LWF (NVMFD5C668NLWF) A = Assembly Location Source Current (Body Diode) I 48 A S Y = Year Single Pulse DraintoSource Avalanche E 205 mJ AS W = Work Week Energy (T = 25C, I = 3.22 A) J L(pk) ZZ = Lot Traceability Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering, marking and shipping information in the device. If any of these limits are exceeded, device functionality should not be package dimensions section on page 5 of this data sheet. assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W JunctiontoCase Steady State R 2.6 JC JunctiontoAmbient Steady State (Note 2) R 50.26 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2019 Rev. 0 NVMFD5C668NL/DNVMFD5C668NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 28 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 60 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 50 A 1.2 2.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.3 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 20 A 5.4 6.5 DS(on) GS D m V = 4.5 V I = 20 A 7.4 9.2 GS D Forward Transconductance g V = 15 V, I = 20 A 61 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1440 ISS Output Capacitance C 800 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 14 RSS Total Gate Charge Q V = 4.5 V, V = 48 V I = 20 A 9.8 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 48 V I = 20 A 21.3 G(TOT) GS DS D Threshold Gate Charge Q 2.5 nC G(TH) GatetoSource Charge Q 4.3 GS V = 10 V, V = 48 V I = 20 A GS DS D GatetoDrain Charge Q 2.1 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 10 d(ON) Rise Time t 22 r V = 10 V, V = 48 V, GS DS ns I = 20 A, R = 1.0 D G TurnOff Delay Time t 40 d(OFF) Fall Time t 7.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.85 1.2 SD J V = 0 V, GS V I = 20 A S T = 125C 0.73 J Reverse Recovery Time t 42 RR Charge Time t 20 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 20 A S Discharge Time t 22 b Reverse Recovery Charge Q 32 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2