NVMFS4841NT1G ON Semiconductor

NVMFS4841N Power MOSFET 30V, 7 m , 89A, Single NChannel SO8FL Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) NVMFS4841N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 25 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 30 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.6 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 4.7 7.0 DS(on) GS D m V = 4.5 V I = 30 A 9.2 11.4 GS D Forward Transconductance g V = 15 V, I = 15 A 16 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1436 ISS Output Capacitance C 348 V = 0 V, f = 1 MHz, V = 12 V pF OSS GS DS Reverse Transfer Capacitance C 177 RSS Total Gate Charge Q 11.5 17 G(TOT) Threshold Gate Charge Q 2.0 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 5.0 GS GatetoDrain Charge Q 5.1 GD Total Gate Charge Q V = 10 V, V = 15 V, 25.4 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 13.5 d(ON) Rise Time t 66.5 r V = 4.5 V, V = 15 V, I = 15 A, GS DS D ns R = 3.0 G Turn Off Delay Time t 15.5 d(OFF) Fall Time t 7.5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 30 A S T = 125C 0.8 J Reverse Recovery Time t 20.5 RR Charge Time t 11.6 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 30 A S Discharge Time t 8.9 b Reverse Recovery Charge Q 10.7 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.