NVMFS4C03N MOSFET Power, Single N-Channel, Logic Level, SO-8FL 30 V, 1.7 m , 159 A www.onsemi.com Features V R MAX I MAX (BR)DSS DS(on) D Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses 1.7 m 10 V DS(on) 30 V 159 A Low Q and Capacitance to Minimize Driver Losses G 2.4 m 4.5 V NVMFS4C03NWF Wettable Flanks Option for Enhanced Optical Inspection D (5,6) AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant G (4) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit S (1,2,3) DraintoSource Voltage V 30 V DSS NCHANNEL MOSFET GatetoSource Voltage V 20 V GS MARKING Continuous Drain Cur- T = 25C I 159 A C D rent R (Notes 1, 2, DIAGRAM JC Steady 3) D State Power Dissipation T = 25C P 77 W C D S D 1 R (Notes 1, 2) JC S 4C03xx SO8 FLAT LEAD S AYWZZ Continuous Drain Cur- T = 25C I 34.9 A A D CASE 488AA rent R (Notes 1, 2, JA G D Steady 3) STYLE 1 D State Power Dissipation T = 25C P 3.71 W 4C03N = Specific Device Code for A D R (Notes 1, 2) JA NVMFS4C03N 4C03WF= Specific Device Code of Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM NVMFS4C03NWF Operating Junction and Storage Temperature T , T 55 to C J stg A = Assembly Location 175 Y = Year W = Work Week Source Current (Body Diode) I 64 A S ZZ = Lot Traceabililty Single Pulse DraintoSource Avalanche E 549 mJ AS Energy (I = 11 A) L(pk) ORDERING INFORMATION Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the NVMFS4C03NT1G SO8 FL 1500 / device. If any of these limits are exceeded, device functionality should not be (PbFree) Tape & Reel assumed, damage may occur and reliability may be affected. NVMFS4C03NT3G SO8 FL 5000 / THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) (PbFree) Tape & Reel Parameter Symbol Value Unit NVMFS4C03NWFT1G SO8 FL 1500 / JunctiontoCase Steady State (Note 2) R 1.95 C/W (PbFree) Tape & Reel JC JunctiontoAmbient Steady State (Note 2) R 40 JA NVMFS4C03NWFT3G SO8 FL 5000 / 1. The entire application environment impacts the thermal resistance values shown, (PbFree) Tape & Reel they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. For information on tape and reel specifications, 3. Maximum current for pulses as long as 1 second is higher but is dependent including part orientation and tape sizes, please on pulse duration and duty cycle. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2019 Rev. 2 NVMFS4C03N/DNVMFS4C03N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 18.2 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 1.4 1.7 DS(on) GS D m V = 4.5 V I = 30 A 2.0 2.4 GS D Forward Transconductance g V = 3 V, I = 30 A 136 S FS DS D Gate Resistance R T = 25 C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 3071 ISS Output Capacitance C 1673 OSS V = 0 V, f = 1 MHz, V = 15 V pF GS DS Reverse Transfer Capacitance C 67 RSS Total Gate Charge Q 20.8 G(TOT) Threshold Gate Charge Q 4.9 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 8.5 GS GatetoDrain Charge Q 4.7 GD Total Gate Charge Q V = 10 V, V = 15 V, 45.2 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 14 d(ON) Rise Time t 32 r V = 4.5 V, V = 15 V, I = 15 A, GS DS D ns R = 3.0 G TurnOff Delay Time t 27 d(OFF) Fall Time t 17 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.75 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.6 J Reverse Recovery Time t 47 RR Charge Time t 23 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 30 A S Discharge Time t 24 b Reverse Recovery Charge Q 39 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2