NVMFS5826NL Power MOSFET 60 V, 24 m , 26 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) NVMFS5826NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 10 A 18 24 m DS(on) GS D V = 4.5 V, I = 10 A 24 32 GS D Forward Transconductance g V = 15 V, I = 5 A 8.0 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1 MHz, 850 pF iss GS V = 25 V DS Output Capacitance C 85 oss Reverse Transfer Capacitance C 50 rss Total Gate Charge Q 9.1 G(TOT) Threshold Gate Charge Q 1.0 G(TH) V = 4.5 V, V = 48 V, I = 10 A nC GS DS D GatetoSource Charge Q 3.0 GS GatetoDrain Charge Q 4.0 GD Total Gate Charge Q V = 10 V, V = 48 V, I = 10 A 17 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9.0 d(ON) Rise Time t 32 r V = 4.5 V, V = 48 V, GS DS ns I = 10 A, R = 2.5 D G Turn Off Delay Time t 15 d(OFF) Fall Time t 24 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, V T = 25C 0.8 1.2 SD GS J I = 10 A S T = 125C 0.7 J Reverse Recovery Time t 15 RR Charge Time t 11 ns a V = 0 V, dIs/dt = 100 A/ s, GS I = 10 A S Discharge Time t 4.0 b Reverse Recovery Charge Q 11 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.