NVMFS5885NL MOSFET Power, Single N-Channel 60 V, 15 m , 39 A Features NVMFS5885NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 60 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 15 A 11.6 15 m DS(on) GS D V = 4.5 V, I = 15 A 15.2 21 GS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1 MHz, 1340 pF iss GS V = 25 V DS Output Capacitance C 125 oss Reverse Transfer Capacitance C 85 rss Total Gate Charge Q 12 G(TOT) Threshold Gate Charge Q 1.1 G(TH) V = 4.5 V, V = 48 V, I = 15 A nC GS DS D GatetoSource Charge Q 4.0 GS GatetoDrain Charge Q 6.3 GD Total Gate Charge Q V = 10 V, V = 48 V, I = 15 A 21 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 10 d(ON) Rise Time t 64 r V = 4.5 V, V = 48 V, GS DS ns I = 15 A, R = 2.5 D G TurnOff Delay Time t 18 d(OFF) Fall Time t 52 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.8 1.2 V SD GS J I = 15 A S T = 125C 0.7 J Reverse Recovery Time t 20 RR Charge Time t 15 ns a V = 0 V, dIs/dt = 100 A/ s, GS I = 15 A S Discharge Time t 5.0 b Reverse Recovery Charge Q 16 nC RR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures.