NVMFS5A140PLZ MOSFET Power, Single P-Channel -40 V, -140 A, 4.2 m Features www.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical V R MAX I MAX DSS DS(ON) D Inspection 40 V 4.2 m 10 V 140 A AECQ101 Qualified and PPAP Capable 7.2 m 4.5 V These Devices are PbFree and are RoHS Compliant D(5) SPECIFICATION MAXIMUM RATINGS (T = 25C unless otherwise J 1: Source noted) (Notes 1, 2, 3) 2: Source Symbol Parameter Value Unit 3: Source 4: Gate G(4) V Drain to Source Voltage 40 V DSS 5: Drain V Gate to Source Voltage 20 V GS I Continuous Drain, Steady T = 25C 140 A D C S (1,2,3) Current R , State JC P-CHANNEL MOSFET (Notes 1, 3) P Power Dissipation T = 25C 200 W D C R (Note 1) JC I Continuous Drain: Steady T = 25C 20 A D A DFN5 Current R State JA (Notes 1, 2, 3) (SO8FL) P Power Dissipation T = 25C 3.8 W D A MARKING DIAGRAM R (Note 1, 2) JA D I Pulsed Drain PW 10 s, 560 A DP S D Current duty cycle 1% S XXXXXX S AYWZZ T , T Operating Junction and Storage Temperature 55 to C J STG +175 D G D I Source Current (Body Diode) 140 A S XXXXXX = Specific Device Code 5A140L(NVMFS5A140PLZ) E Single Pulse Drain to Source Avalanche 420 mJ AS 140LWF(NVMFS5A140PLZWF) Energy (L= 1.0 mH, I = 29 A) L(pk) A = Assembly Location T Lead Temperature for Soldering Purposes 260 C L Y = Year (1/8 from case for 10 s) W = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Junction to Case Steady State 0.75 JC C/W R Junction to Ambient Steady State (Note 2) 39 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surface mounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2019 Rev. 0 NVMFS5A140PLZ/DNVMFS5A140PLZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V Drain to Source Breakdown Voltage I = 1 mA, V = 0 V 40 V (BR)DSS D GS I Zero Gate Voltage Drain Current V = 40 V, V = 0 V T = 25C 1.0 A DSS DS GS J T = 100C 100 A J (Note 4) I Gate to Source Leakage Current V = 16 V, V = 0 V 10 A GSS GS DS ON CHARACTERISTICS (Note 5) V Gate Threshold Voltage V = 10 V, I = 1mA 1.2 2.6 V GS(th) DS D R Drain to Source On Resistance V = 10 V I = 50 A 3.2 4.2 DS(on) GS D m V = 4.5 V I = 50 A 5.0 7.2 GS D g Forward Transconductance V = 10 V, I = 50 A 125 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE C Input Capacitance V = 0 V, f = 1 MHz 7400 iss GS V = 20 V, DS C Output Capacitance 1030 oss pF C Reverse Transfer Capacitance 720 rss Q Total Gate Charge V = 10 V, I = 50 A 136 g(tot) GS D V = 20 V, DS Q Gate to Source Charge 26 gs nC Q Gate to Drain Charge 31 gd SWITCHING CHARACTERISTICS (Note 6) t Turn-On Delay Time V = 20 V, I = 50 A, 50 DS D d(on) V = 10 V, R = 50 GS G t Rise Time 860 r ns t Turn-Off Delay Time 540 d(off) t Fall Time 740 f DRAIN-SOURCE DIODE CHARACTERISTICS V Forward Diode Voltage V = 0 V, I = 50 A 0.83 1.5 V SD GS S t Reverse Recovery Time V = 0 V, I = 50 A 108 ns rr GS S di/dt = 100 A/ s Q Reverse Recovery Charge 236 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 100 C. Product is not tested to this condition in production. J 5. Pulse Test: pulse width 300 s, duty cycle 2 %. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2