X-On Electronics has gained recognition as a prominent supplier of NVMFS5A140PLZT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFS5A140PLZT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMFS5A140PLZT1G ON Semiconductor

NVMFS5A140PLZT1G electronic component of ON Semiconductor
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Part No.NVMFS5A140PLZT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET -40V4.2MOHMSINGLE
Datasheet: NVMFS5A140PLZT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 1.4165 ea
Line Total: USD 2124.75 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1500
Multiples : 1500
1500 : USD 1.4165
15000 : USD 1.3578
150000 : USD 1.3306

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1500
Multiples : 1500
1500 : USD 1.7447
4500 : USD 1.6832

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVMFS5A140PLZT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFS5A140PLZT1G and other electronic components in the MOSFETs category and beyond.

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NVMFS5A140PLZ MOSFET Power, Single P-Channel -40 V, -140 A, 4.2 m Features www.onsemi.com Small Footprint (5 x 6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical V R MAX I MAX DSS DS(ON) D Inspection 40 V 4.2 m 10 V 140 A AECQ101 Qualified and PPAP Capable 7.2 m 4.5 V These Devices are PbFree and are RoHS Compliant D(5) SPECIFICATION MAXIMUM RATINGS (T = 25C unless otherwise J 1: Source noted) (Notes 1, 2, 3) 2: Source Symbol Parameter Value Unit 3: Source 4: Gate G(4) V Drain to Source Voltage 40 V DSS 5: Drain V Gate to Source Voltage 20 V GS I Continuous Drain, Steady T = 25C 140 A D C S (1,2,3) Current R , State JC P-CHANNEL MOSFET (Notes 1, 3) P Power Dissipation T = 25C 200 W D C R (Note 1) JC I Continuous Drain: Steady T = 25C 20 A D A DFN5 Current R State JA (Notes 1, 2, 3) (SO8FL) P Power Dissipation T = 25C 3.8 W D A MARKING DIAGRAM R (Note 1, 2) JA D I Pulsed Drain PW 10 s, 560 A DP S D Current duty cycle 1% S XXXXXX S AYWZZ T , T Operating Junction and Storage Temperature 55 to C J STG +175 D G D I Source Current (Body Diode) 140 A S XXXXXX = Specific Device Code 5A140L(NVMFS5A140PLZ) E Single Pulse Drain to Source Avalanche 420 mJ AS 140LWF(NVMFS5A140PLZWF) Energy (L= 1.0 mH, I = 29 A) L(pk) A = Assembly Location T Lead Temperature for Soldering Purposes 260 C L Y = Year (1/8 from case for 10 s) W = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Junction to Case Steady State 0.75 JC C/W R Junction to Ambient Steady State (Note 2) 39 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surface mounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2019 Rev. 0 NVMFS5A140PLZ/DNVMFS5A140PLZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V Drain to Source Breakdown Voltage I = 1 mA, V = 0 V 40 V (BR)DSS D GS I Zero Gate Voltage Drain Current V = 40 V, V = 0 V T = 25C 1.0 A DSS DS GS J T = 100C 100 A J (Note 4) I Gate to Source Leakage Current V = 16 V, V = 0 V 10 A GSS GS DS ON CHARACTERISTICS (Note 5) V Gate Threshold Voltage V = 10 V, I = 1mA 1.2 2.6 V GS(th) DS D R Drain to Source On Resistance V = 10 V I = 50 A 3.2 4.2 DS(on) GS D m V = 4.5 V I = 50 A 5.0 7.2 GS D g Forward Transconductance V = 10 V, I = 50 A 125 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE C Input Capacitance V = 0 V, f = 1 MHz 7400 iss GS V = 20 V, DS C Output Capacitance 1030 oss pF C Reverse Transfer Capacitance 720 rss Q Total Gate Charge V = 10 V, I = 50 A 136 g(tot) GS D V = 20 V, DS Q Gate to Source Charge 26 gs nC Q Gate to Drain Charge 31 gd SWITCHING CHARACTERISTICS (Note 6) t Turn-On Delay Time V = 20 V, I = 50 A, 50 DS D d(on) V = 10 V, R = 50 GS G t Rise Time 860 r ns t Turn-Off Delay Time 540 d(off) t Fall Time 740 f DRAIN-SOURCE DIODE CHARACTERISTICS V Forward Diode Voltage V = 0 V, I = 50 A 0.83 1.5 V SD GS S t Reverse Recovery Time V = 0 V, I = 50 A 108 ns rr GS S di/dt = 100 A/ s Q Reverse Recovery Charge 236 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 100 C. Product is not tested to this condition in production. J 5. Pulse Test: pulse width 300 s, duty cycle 2 %. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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