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X-On Electronics has gained recognition as a prominent supplier of SIRC04DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIRC04DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIRC04DP-T1-GE3 Vishay

SIRC04DP-T1-GE3 electronic component of Vishay
SIRC04DP-T1-GE3 Vishay
SIRC04DP-T1-GE3 MOSFETs
SIRC04DP-T1-GE3  Semiconductors

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See Product Specifications
Part No. SIRC04DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Datasheet: SIRC04DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
0: USD 2.0752 ea
Line Total: USD 0 
Availability - 0
MOQ: 0  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 13 Jan to Fri. 17 Jan
MOQ : 0
Multiples : 1
0 : USD 2.0752
38 : USD 1.7208
100 : USD 1.1657
500 : USD 0.915
1000 : USD 0.8769
5000 : USD 0.8769

0
Ship by Thu. 09 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 2.1482
10 : USD 1.5978
100 : USD 1.2783
500 : USD 1.0231
1000 : USD 0.8661
3000 : USD 0.8194
6000 : USD 0.7943
9000 : USD 0.7932

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIRC04DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIRC04DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm SiRC04DP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PowerPAK SO-8 Single D TrenchFET Gen IV power MOSFET D 8 D 7 D 6 SKYFET with monolithic Schottky diode 5 100 % R and UIS tested g Material categorization: for definitions of 1 compliance please see www.vishay.com/doc 99912 2 S 3 S 4 S 1 APPLICATIONS D G Top View Bottom View Synchronous buck PRODUCT SUMMARY Synchronous rectification V (V) 30 DS DC/DC conversion Schottky R max. () at V = 10 V 0.00245 DS(on) GS Diode G R max. () at V = 4.5 V 0.00350 DS(on) GS Q typ. (nC) 16.6 g a, g I (A) 60 D SCHOTTKY S V (V) at 5 A 0.7 F a, g N-Channel MOSFET I (A) 60 F Configuration Single plus integrated Schottky ORDERING INFORMATION Package PowerPAK SO-8 Single Lead (Pb)-free and halogen-free SiRC04DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 30 DS V Gate-source voltage V +20, -16 GS g T = 25 C 60 C g T = 70 C 60 C Continuous drain current (T = 150 C) I J D b, c T = 25 C 33.6 A b, c T = 70 C 26.9 A A Pulsed drain current (t = 300 s) I 100 DM g T = 25 C 60 C Continuous source-drain diode current I S b ,c T = 25 C 7.1 A Single pulse avalanche current I 15 AS L = 0.3 mH Single pulse avalanche energy E 11.25 mJ AS T = 25 C 50 C T = 70 C 32 C Maximum power dissipation P W D b, c T = 25 C 5 A b, c T = 70 C 3.2 A Operating junction and storage temperature range T , T -55 to +150 J stg C d, e Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b,f Maximum junction-to-ambient t 10 s R 20 25 thJA C/W Maximum junction-to-case (drain) Steady state R 1.9 2.5 thJC Notes a. Based on T = 25 C C b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 70 C/W g. Package limit S17-0755-Rev. A, 15-May-17 Document Number: 62954 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mm SiRC04DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 30 - - DS GS D c Drain-source breakdown voltage (transient) V V = 0 V, I = 15 A, t 50 ns 36 - - V DSt GS D(aval) transcient Gate-source threshold voltage V V = V , I = 250 A 1 - 2.1 GS(th) DS GS D Gate-source leakage I V = 0 V, V = +20, -16 V - - 100 nA GSS DS GS V = 30 V, V = 0 V - 0.02 0.10 DS GS Zero gate voltage drain current I mA DSS V = 30 V, V = 0 V, T = 55 C - 0.15 1 DS GS J a On-state drain current I V 5 V, V = 10 V 30 - - A D(on) DS GS V = 10 V, I = 15 A - 0.00205 0.00245 GS D a Drain-source on-state resistance R DS(on) V = 4.5 V, I = 10 A - 0.00280 0.00350 GS D a Forward transconductance g V = 10 V, I = 15 A - 140 - S fs DS D b Dynamic Input capacitance C - 2850 - iss Output capacitance C - 1050 - oss V = 15 V, V = 0 V, f = 1 MHz pF DS GS Reverse transfer capacitance C -74 - rss C /C ratio - 0.026 0.052 rss iss V = 15 V, V = 10 V, I = 15 A - 37 56 DS GS D Total gate charge Q g -16.6 25 V = 15 V, V = 4.5 V, I = 15 A DS GS D Gate-source charge Q -6.7 - nC gs Gate-drain charge Q -2.9 - gd Output charge Q V = 15 V, V = 0 V - 33 - oss DS GS Gate resistance R f = 1 MHz 0.4 1.2 2 g Turn-on delay time t -12 24 d(on) Rise time t -17 34 r V = 15 V, R = 1.5 DD L I 10 A, V = 10 V, R = 1 D GEN g Turn-off delay time t -25 50 d(off) Fall time t -8 16 f ns Turn-on delay time t -30 60 d(on) Rise time t -55 110 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 D GEN g Turn-off delay time t -25 50 d(off) Fall time t -9 18 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 60 S C A Pulse diode forward current (t = 100 s) I -- 100 SM Body diode voltage V I = 5 A - 0.45 0.7 V SD S Body diode reverse recovery time t -38 76 ns rr Body diode reverse recovery charge Q -31 62 nC rr I = 10 A, di/dt = 100 A/s, F T = 25 C J Reverse recovery fall time t -18 - a ns Reverse recovery rise time t -20 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. T = 25 C Expected voltage stress during 100 % UIS test. Production data log is not available CASE Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0755-Rev. A, 15-May-17 Document Number: 62954 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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