X-On Electronics has gained recognition as a prominent supplier of BSC0702LSATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSC0702LSATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSC0702LSATMA1 Infineon

BSC0702LSATMA1 electronic component of Infineon
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Part No.BSC0702LSATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET DIFFERENTIATED MOSFETS
Datasheet: BSC0702LSATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2423 ea
Line Total: USD 1.24 
Availability - 1
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2423
10 : USD 1.042
30 : USD 0.9429
100 : USD 0.8435
500 : USD 0.6184
1000 : USD 0.5879

   
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We are delighted to provide the BSC0702LSATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSC0702LSATMA1 and other electronic components in the MOSFETs category and beyond.

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The BSC0702LSATMA1 is a high-performance MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) developed by Infineon for latching and differential applications. It is composed of two high-performance insulated-gate field-effect transistors (IGFET), featuring high-speed switching and low output noise in the range of 50kHz to 500kHz. The BSC0702LSATMA1 is optimally designed for usage in electronic circuits in order to amplify, level shift, or otherwise modify signals. This part also features impeccable thermal management and exceptional dielectric isolation. Additionally, its low threshold voltage range makes it ideal for sensitive radio-frequency circuits, such as data radios.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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