NTMFS08N2D5C MOSFET Power Trench, NChannel, Shielded Gate 80 V, 166 A, 2.7 m General Description www.onsemi.com This N-Channel MV MOSFET is produced using ON Semiconductors advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to V R MAX I MAX minimize on-state resistance and yet maintain superior switching DS DS(ON) D performance with best in class soft body diode. 80 V 2.7 m 10 V 166 A 8 m 6 V Features Shielded Gate MOSFET Technology S (1, 2, 3) Max R = 2.7 m at V = 10 V, I = 68 A DS(on) GS D Max R = 8 m at V = 6 V, I = 34 A DS(on) GS D 50% Lower Qrr than Other MOSFET Suppliers G (4) Lowers Switching Noise/EMI MSL1 Robust Package Design 100% UIL Tested These Devices are PbFree, Halogen Free/BFR Free and are RoHS D (5, 6, 7, 8) Compliant N-CHANNEL MOSFET Applications Pin 1 Primary DCDC MOSFET Synchronous Rectifier in DCDC and ACDC Motor Drive Solar Top Bottom Power 56 MAXIMUM RATINGS (T = 25C unless otherwise noted) (PQFN8) A CASE 483AF Symbol Parameter Value Unit V Drain to Source Voltage 80 V DS MARKING DIAGRAM V Gate to Source Voltage 20 V GS S D I Drain Current: A D Continuous, T = 25C (Note 5) 166 C S Y&Z&3&K D Continuous, T = 100C (Note 5) 105 C NTMFS Continuous, T = 25C (Note 1a) 24 A S D 08N2D5C Pulsed (Note 4) 823 G D E Single Pulse Avalanche Energy 600 mJ AS (Note 3) Y = ON Semiconductor Logo P Power Dissipation: W D &Z = Assembly Plant Code T = 25C 138 C &3 = Numeric Date Code T = 25C (Note 1a) 2.7 A &K = Lot Code NTMFS08N2D5C = Specific Device Code T , T Operating and Storage Junction 55 to +150 C J STG Temperature Range ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information on page 3 of assumed, damage may occur and reliability may be affected. this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2019 Rev. 2 NTMFS08N2D5C/DNTMFS08N2D5C THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case 0.9 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 45 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 80 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, referenced to 25C 62 mV/C DSS D Coefficient / T J I Zero Gate Voltage Drain Current V = 64 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 380 A 2.0 2.9 4.0 V GS(th) GS DS D V Gate to Source Threshold Voltage I = 380 A, referenced to 25C 8.3 mV/C GS(th) D / T Temperature Coefficient J r Static Drain to Source On Resistance V = 10 V, I = 68 A 2.2 2.7 m DS(on) GS D V = 6 V, I = 34 A 3.3 8 GS D V = 10 V, I = 68 A, T = 125C 3.7 5.4 GS D J g Forward Transconductance V = 5 V, I = 68 A 148 S FS DS D DYNAMIC CHARACTERISTICS V = 40 V, V = 0 V, f = 1 MHz C Input Capacitance 4455 7500 pF iss DS GS C Output Capacitance 1480 2485 pF oss C Reverse Transfer Capacitance 59 105 pF rss R Gate Resistance 0.8 1.6 g SWITCHING CHARACTERISTICS t Turn-On Delay Time V = 40 V, I = 68 A, V = 10 V, 21 34 ns d(on) DD D GS R = 6 GEN t Rise Time 11 20 ns r t Turn-Off Delay Time 29 47 ns d(off) t Fall Time 7 13 ns f Q Total Gate Charge V = 0 V to 10 V, V = 40 V, 60 100 nC g GS DD I = 68 A D V = 0 V to 6 V, V = 40 V, 38 65 nC GS DD I = 68 A D Q Gate to Source Charge V = 40 V, I = 68 A 19 nC gs DD D Q Gate to Drain Miller Charge V = 40 V, I = 68 A 12 nC gd DD D Q Output Charge V = 40 V, V = 0 V 84 nC oss DD GS Q Total Gate Charge Sync V = 0 V, I = 68 A 51 nC sync DS D www.onsemi.com 2