DMN95H2D2HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R DSS DS(ON) High BV Rating for Power Application T = +25C DSS C Low Input/Output Leakage 950V 2.2 V = 10V 6A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation complementary dual MOSFET features low on- Mechanical Data resistance and fast switching, making it ideal for high efficiency power management applications. Case: ITO220AB (Type TH) Case Material: Molded Plastic, Green Molding Compound, UL Flammability Classification Rating 94V-0 Applications Terminals: Matte Tin Finish Annealed over Copper Leadframe. Motor Control Solderable per MIL-STD-202, Method 208 Backlighting Terminal Connections: See Diagram Below DC-DC Converters Weight: 1.85 grams (Approximate) Power Management Functions ITO220AB (Type TH) Bottom View Top View Top View Equivalent Circuit Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DMN95H2D2HCTI ITO220AB (Type TH) 50 pieces/tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN95H2D2HCTI Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 950 V V DSS Gate-Source Voltage 30 V V GSS Continuous Drain Current (Note 5) T = +25C 6 C I A D 4 V = 10V T = +100C GS C Pulsed Drain Current (Note 6) I 24 A DM L = 60mH I 3.5 A AS L = 60mH 360 mJ E AS Thermal Characteristics Characteristic Symbol Max Unit 40 T = +25C C Power Dissipation (Note 5) W P D 14 T = +100C C 3.6 Thermal Resistance, Junction to Case (Note 5) T = +25C R C/W C JC Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 950 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 950V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 3 4 5 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 1.7 2.2 R V = 10V, I = 3A DS(ON) GS D Diode Forward Voltage 0.85 1.2 V V V = 0V, I = 6A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 1487 C iss V = 25V, f = 1MHz, DS Output Capacitance 113 pF C oss V = 0V GS 1 Reverse Transfer Capacitance C rss 4.7 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 20.3 Total Gate Charge Q g V = 720V, I = 6A, DD D 6.4 Gate-Source Charge Q nC gs V = 10V GS 6.1 Gate-Drain Charge Q gd 39 Turn-On Delay Time t D(ON) Turn-On Rise Time t V = 450V, V = 10V, R DD GS ns Turn-Off Delay Time R = 25, I = 6A t g D D(OFF) Turn-Off Fall Time t F 607 Body Diode Reverse Recovery Time t ns RR I = 6A, dI/dt = 100A/s F Body Diode Reverse Recovery Charge Q C RR Notes: 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. 2 of 7 June 2017 DMN95H2D2HCTI www.diodes.com Diodes Incorporated Document number: DS39275 Rev. 2 - 2