MOSFET - Power, Single N-Channel, SO8-FL 25 V, 0.68 m , 365 A NTMFS0D8N02P1E Features Small Footprint (5x6mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R MAX I MAX (BR)DSS DS(ON) D Compliant 0.68 m 10 V 25 V 365 A Applications 0.80 m 4.5 V DCDC Converters Power Load Switch D (58) Notebook Battery Management MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 25 V DSS G (4) GatetoSource Voltage V +16/ V GS 12 S (1,2,3) Continuous Drain T = 25C I 365 A C D NCHANNEL MOSFET Current R JC T =85C 263 (Note 1) Steady C State Power Dissipation T = 25C P 139 W C D MARKING R (Note 1) JC DIAGRAMS Continuous Drain T = 25C I 55 A A D D Current R JA S D Steady T = 85C 40 (Notes 1, 3) A SO8 FLAT LEAD State S 2EFN CASE 488AA Power Dissipation T = 25C P 3.2 W A D AYWZZ S STYLE 1 R (Notes 1, 3) JA G D 1 D Continuous Drain T = 25C I 30 A A D Current R JA 2EFN = Specific Device Code T = 85C 21 Steady (Notes 2, 3) A A = Assembly Location State Y = Year Power Dissipation T = 25C P 0.93 W A D W = Work Week R (Notes 2, 3) JA ZZ = Lot Traceabililty Pulsed Drain Current T = 25C, t = 10 s I 762 A A p DM Single Pulse DraintoSource Avalanche E 666 mJ AS Energy (I = 115.4 A , L = 0.1 mH) (Note 4) L pk ORDERING INFORMATION Operating Junction and Storage Temperature T , T 55 to C See detailed ordering, marking and shipping information in the J STG Range +150 package dimensions section on page 6 of this data sheet. Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. Surfacemounted on FR4 board using 1 in pad size, 2 oz Cu pad. 2. Surfacemounted on FR4 board using minimum pad size, 2 oz Cu pad. 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Actual continuous current will be limited by thermal & electromechanical application board design. R is determined by the users board design. JC 4. 100% UIS tested at L = 1 mH, I = 30.7 A. AS Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2021 Rev. 1 NTMFS0D8N02P1E/DNTMFS0D8N02P1E THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State (Note 1) R 0.9 JC C/W JunctiontoAmbient Steady State (Note 1) R 39 JA JunctiontoAmbient Steady State (Note 2) R 135 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 25 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 1 mA. ref to 25C 16 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 DSS GS J V = 20 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = +16 V/12 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 2 mA 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T I = 2 mA. ref to 25C 4.4 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V, I = 46 A 0.44 0.68 DS(on) GS D m V = 4.5 V, I = 43 A 0.54 0.80 GS D Forward Transconductance g V = 5 V, I = 46 A 307 S FS DS D Gate Resistance R T = 25C 0.48 G A CHARGES AND CAPACITANCES Input Capacitance C 8600 ISS Output Capacitance C 2285 V = 0 V, V = 13 V, f = 1 MHz pF OSS GS DS Reverse Transfer Capacitance C 129 RSS Total Gate Charge Q 52 G(TOT) Threshold Gate Charge Q 10 G(TH) V = 4.5 V, V = 13 V I = 46 A nC GS DS D GatetoSource Charge Q 21 GS GatetoDrain Charge Q 9 GD Total Gate Charge Q V = 10 V, V = 13 V I = 46 A 116 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS, V = 4.5 V (Note 6) GS TurnOn Delay Time t 45 d(ON) Rise Time t 24 r V = 4.5 V, V = 13 V, GS DS ns I = 46 A, R = 6.0 D G TurnOff Delay Time t 68 d(OFF) Fall Time t 20 f SWITCHING CHARACTERISTICS, V = 10 V (Note 6) GS TurnOn Delay Time t 23 d(ON) Rise Time t 6.8 r V = 10 V, V = 13 V, GS DS ns I = 46 A, R = 6.0 D G TurnOff Delay Time t 123 d(OFF) Fall Time t 19 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.77 1.2 SD J V = 0 V, GS V I = 46 A S T = 125C 0.62 J www.onsemi.com 2