TSM3446 20V N-Channel MOSFET SOT-26 Pin Definition: PRODUCT SUMMARY 1. Drain 6. Drain V (V) R (m) I (A) DS DS(on) D 2. Drain 5, Drain 3. Gate 4. Source 33 V = 4.5V 5.3 GS 20 40 V = 2.5V 4.4 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM3446CX6 RFG SOT-26 3Kpcs / 7 Reel N-Channel MOSFET TSM3446CX6 RKG SOT-26 10Kpcs / 13 Reel Note: G denote for Halogen Free Product o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current, V 4.5V. I 5.3 A GS D Pulsed Drain Current, V 4.5V I 20 A GS DM a,b Continuous Source Current (Diode Conduction) I 1.7 A S o Ta = 25 C 2.0 Maximum Power Dissipation P W D o Ta = 70 C 1.3 Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance R 30 C/W JC Junction to Ambient Thermal Resistance (PCB mounted) R 80 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 5 sec. Document Number: DS P0000078 1 Version: E15 TSM3446 20V N-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250uA V 0.5 0.7 1.0 V DS GS D GS(TH) Gate Body Leakage V = 10V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 16, V = 0V I -- -- 1.0 uA DS GS DSS V = 4.5V, I = 5.3A -- 27 33 GS D Drain-Source On-State Resistance R m DS(ON) V = 2.5V, I = 4.4A -- 33 40 GS D Forward Transconductance V = 10V, I = 5.3A g -- 20 -- S DS D fs Diode Forward Voltage I = 1A, V = 0V V -- 0.7 1.3 V S GS SD b Dynamic Total Gate Charge Q -- 12.5 -- g V = 10V, I = 5.3A, DS D nC Gate-Source Charge Q -- 0.72 -- gs V = 4.5V GS Gate-Drain Charge Q -- 4.3 -- gd Input Capacitance C -- 700 -- iss V = 10V, V = 0V, DS GS Output Capacitance C -- 125 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 110 -- rss c Switching Turn-On Delay Time t -- 4.6 -- d(on) V = 10V, R = 10, DD L Turn-On Rise Time t -- 14 -- r I = 1A, V = 4.5V, nS D GEN Turn-Off Delay Time t -- 30 -- d(off) R = 6 G Turn-Off Fall Time t -- 5 -- f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Document Number: DS P0000078 2 Version: E15