TSM3N100CP Taiwan Semiconductor N-Channel Power MOSFET 1000V, 2.5A, 6 FEATURES KEY PERFORMANCE PARAMETERS 100% avalanche tested PARAMETER VALUE UNIT Advanced planar process V 1000 V DS Compliant to RoHS Directive 2011/65/EU and in R (max) 6 accordance to WEEE 2002/96/EC DS(on) Halogen-free according to IEC 61249-2-21 Q 19 nC g APPLICATIONS AC/DC LED Lighting Power Supply Power Meter TO-252 (DPAK) Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL Limit UNIT Drain-Source Voltage V 1000 V DS Gate-Source Voltage V 30 V GS T = 25C 2.5 C (Note 1) Continuous Drain Current I A D T = 100C 1.57 C (Note 2) Pulsed Drain Current I 10 A DM 99 Total Power Dissipation T = 25C P W C DTOT (Note 3) 20 mJ Single Pulse Avalanche Energy E AS (Note 3) 1.4 A Single Pulse Avalanche Current I AS - 55 to +150 C Operating Junction and Storage Temperature Range T , T J STG THERMAL PERFORMANCE PARAMETER SYMBOL Limit UNIT Junction to Case Thermal Resistance R 1.26 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. R shown below for single device operation on FR-4 PCB in still air. JA 1 Version: A1606 Not Recommended TSM3N100CP Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 1000 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 3.5 4.5 5.5 DS GS D GS(TH) V Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 1000V, V = 0V I -- -- 1 DS GS DSS A Drain-Source On-State Resistance -- 5.6 6 V = 10V, I = 1.25A R GS D DS(on) (Note 4) (Note 5) Dynamic Total Gate Charge Q -- 19 -- g V = 800V, I = 2.5A, DS D Gate-Source Charge Q -- 6 -- nC gs V = 10V GS 10 Gate-Drain Charge Q -- -- gd Input Capacitance C -- 664 -- iss V = 25V, V = 0V, DS GS Output Capacitance C -- 40 -- oss pF f = 1.0MHz Reverse Transfer Capacitance C 17 rss Gate Resistance f = 1.0MHz, open drain R -- 2.2 -- g (Note 6) Switching 45 Turn-On Delay Time t -- -- d(on) Turn-On Rise Time t -- 25 -- r V = 500V, R = 25, DD G ns Turn-Off Delay Time I = 1.25A, V = 10V t -- 70 -- D GS d(off) Turn-Off Fall Time t -- 28 -- f Source-Drain Diode (Note 4) Forward Voltage -- -- 1.4 V I = 2.5A, V = 0V V S GS SD Reverse Recovery Time -- 378 -- ns t rr V = 100V, I = 2.5A R S Reverse Recovery Charge -- 1.62 -- C dI /dt = 100A/s Q F rr Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature o 3. L = 20mH, I = 1.4A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM3N100CP ROG TO-252 (DPAK) 2,500pcs / 13 Reel 2 Version: A1606 Not Recommended