X-On Electronics has gained recognition as a prominent supplier of TSM3N100CP ROG MOSFETs across the USA, India, Europe, Australia, and various other global locations. TSM3N100CP ROG MOSFETs are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TSM3N100CP ROG Taiwan Semiconductor

TSM3N100CP ROG electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.TSM3N100CP ROG
Manufacturer: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFET 1000V 2.5A Single N- Channel Power MOSFET
Datasheet: TSM3N100CP ROG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.0581
10 : USD 1.1237
100 : USD 0.8553
500 : USD 0.6636
1000 : USD 0.5653
2500 : USD 0.5384
5000 : USD 0.522
10000 : USD 0.5066
25000 : USD 0.4912
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Product
Transistor Type
Brand
Fall Time
Moisture Sensitive
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TSM3N100CP ROG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSM3N100CP ROG and other electronic components in the MOSFETs category and beyond.

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TSM3N100CP Taiwan Semiconductor N-Channel Power MOSFET 1000V, 2.5A, 6 FEATURES KEY PERFORMANCE PARAMETERS 100% avalanche tested PARAMETER VALUE UNIT Advanced planar process V 1000 V DS Compliant to RoHS Directive 2011/65/EU and in R (max) 6 accordance to WEEE 2002/96/EC DS(on) Halogen-free according to IEC 61249-2-21 Q 19 nC g APPLICATIONS AC/DC LED Lighting Power Supply Power Meter TO-252 (DPAK) Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL Limit UNIT Drain-Source Voltage V 1000 V DS Gate-Source Voltage V 30 V GS T = 25C 2.5 C (Note 1) Continuous Drain Current I A D T = 100C 1.57 C (Note 2) Pulsed Drain Current I 10 A DM 99 Total Power Dissipation T = 25C P W C DTOT (Note 3) 20 mJ Single Pulse Avalanche Energy E AS (Note 3) 1.4 A Single Pulse Avalanche Current I AS - 55 to +150 C Operating Junction and Storage Temperature Range T , T J STG THERMAL PERFORMANCE PARAMETER SYMBOL Limit UNIT Junction to Case Thermal Resistance R 1.26 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. R shown below for single device operation on FR-4 PCB in still air. JA 1 Version: A1606 Not Recommended TSM3N100CP Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 1000 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 3.5 4.5 5.5 DS GS D GS(TH) V Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 1000V, V = 0V I -- -- 1 DS GS DSS A Drain-Source On-State Resistance -- 5.6 6 V = 10V, I = 1.25A R GS D DS(on) (Note 4) (Note 5) Dynamic Total Gate Charge Q -- 19 -- g V = 800V, I = 2.5A, DS D Gate-Source Charge Q -- 6 -- nC gs V = 10V GS 10 Gate-Drain Charge Q -- -- gd Input Capacitance C -- 664 -- iss V = 25V, V = 0V, DS GS Output Capacitance C -- 40 -- oss pF f = 1.0MHz Reverse Transfer Capacitance C 17 rss Gate Resistance f = 1.0MHz, open drain R -- 2.2 -- g (Note 6) Switching 45 Turn-On Delay Time t -- -- d(on) Turn-On Rise Time t -- 25 -- r V = 500V, R = 25, DD G ns Turn-Off Delay Time I = 1.25A, V = 10V t -- 70 -- D GS d(off) Turn-Off Fall Time t -- 28 -- f Source-Drain Diode (Note 4) Forward Voltage -- -- 1.4 V I = 2.5A, V = 0V V S GS SD Reverse Recovery Time -- 378 -- ns t rr V = 100V, I = 2.5A R S Reverse Recovery Charge -- 1.62 -- C dI /dt = 100A/s Q F rr Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature o 3. L = 20mH, I = 1.4A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM3N100CP ROG TO-252 (DPAK) 2,500pcs / 13 Reel 2 Version: A1606 Not Recommended

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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