SIL2301-TP Micro Commercial Components (MCC)

SIL2301 Features TrenchFET Power MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix-H Dual Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) P-Channel MOSFET Maximum Ratings o o Operating Junction Temperature Range : -55 C to +150 C o o Storage Temperature Range: -55 C to +150 C SOT23-6L o Maximum Thermal Resistance: 100 C/W Junction to Ambient G Parameter Symbol Rating Unit 66 5 4 V Drain -source Voltage -20V V DS C B Gate -Source Voltage V 8 V GS 1 2 3 I -2.3 A Drain Current-Continuous D (Note 2) A Drain Current-Pulse I -10 A DM H Power Dissipation P 1.25 W D M K J D L Internal Structure D1 S1 D2 DIMENSIONS 6 5 4 INCHES MM DIM NOTE MIN MAX MIN MAX A 0.012 0.020 0.30 0.50 B 0.051 0.070 1.30 1.80 C 0.087 0.126 2.20 3.20 1 2 3 D 0.037 0.95 TYP. Marking: S1 G1 S2 G2 0.074 1.90 TYP. G H 0.106 0.122 2.70 3.10 J 0.002 0.006 0.05 0.15 K 0.030 0.051 0.75 1.30 L 0.012 0.024 0.30 0.60 M 0.003 0.008 0.08 0.22 Rev.3-4-12122020 1/4 MCCSEMI.COMSIL2301 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V Drain-Source Breakdown Voltage (BR)DSS V =0V, I =-250A V GS D -20 (Note 1) V V =V , I =-250A -0.4 -0.7 -1.0 V GS(th) DS GS D Gate-Threshold Voltage I V = 8V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS I V =-20V, V =0V Zero Gate Voltage Drain Current -1 A DSS DS GS V =-4.5V, I =-2.5A 58 90 GS D (Note 1) Drain-Source On-Resistance R DS(on) V =-2.5V, I =-2.0A 80 125 m GS D V =-1.8V, I =-1.6A 120 200 GS D (Note 1) Forward Tranconductance V =-5V, I =-2.8A g 4 S FS DS D (Note 1) Diode Forward Voltage V V =0V, I =0.7A V -1.2 SD GS S (Note 2) Dynamic Characteristics C Input Capacitance 405 iss V =-10V,V =0V, f=1MHz Output Capacitance C pF DS GS 75 oss C Reverse Transfer Capacitance 55 rss (Note 2) Switching Characteristics t Turn-On Delay Time 20 d(on) Turn-On Rise Time t 60 r V =-10V,V =-4.5V, DD GEN ns I =-1A,R =1,R =10 L D GEN t Turn-Off Delay Time 50 d(off) Turn-Off Fall Time t 20 f Total Gate Charge(-4.5V) 5.5 10 Q g Total Gate Charge(-2.5V) 3.3 6 nC V =-10V,V =-2.5V,I =-3A Gate-Source Chage Q DS GS D 0.7 gs Gage-Drain Charge Q 1.3 gd Note: 1. Pulse Test: Pulse Width300s,Duty Cycle0.5%. 2. Guaranteed by Design, Not Subject to Production Testing. Rev.3-4-12122020 2/4 MCCSEMI.COM