MOSFET - Power for 1-Cell Lithium-ion Battery Protection EFC2K103NUZ 12 V, 1.8 m , 40 A, Dual N-Channel www.onsemi.com This power MOSFET features a low onstate resistance. This device is suitable for applications such as power switches of portable V R MAX I MAX machines. Best suited for 1cell lithiumion battery applications. SSS SS(ON) S 12 V 1.8 m 4.5 V 40 A Features 1.9 m 3.8 V 2.5 V drive CommonDrain type 2.6 m 3.1 V ESD DiodeProtected Gate 4.2 m 2.5 V PbFree, Halogen Free and RoHS Compliance ELECTRICAL CONNECTION Typical Applications NChannel 1Cell Lithiumion Battery Charging and Discharging Switch 6, 7, 9, 10 SPECIFICATIONS 1 : Source1 ABSOLUTE MAXIMUM RATINGS at T = 25C Rg A 2 : Source1 8 3 : Gate1 Parameter Symbol Value Unit 4 : Source1 5 : Source1 Source to Source Voltage V 12 V SSS 6 : Source2 7 : Source2 Gate to Source Voltage V 8 V GSS Rg 8 : Gate2 3 9 : Source2 Source Current (DC) I 40 A S 10 : Source2 Source Current (Pulse) I 140 A SP PW 10 S, Duty Cycle 1% Rg = 300 1, 2, 4, 5 Total Dissipation (Note 1) P 3.3 W T Junction Temperature T 150 C PIN ASSIGNMENT J Storage Temperature T 55 to +150 C stg 3 1 4 Stresses exceeding those listed in the Maximum Ratings table may damage the 2 5 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 9 6 8 7 10 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit MARKING DIAGRAM Junction to Ambient (Note 1) R 37 C/W JA PB 2 1. Surface mounted on ceramic substrate (5000 mm 0.8 mm) AYWZZ WLCSP10 PB = Specific Device Code 3.54x1.77x0.140 A = Assembly Location CASE 567XB Y = Year W = Work Week ZZ = Assembly Lot ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2019 Rev. 1 EFC2K103NUZ/DEFC2K103NUZ ELECTRICAL CHARACTERISTICS at T = 25C A Value Min Typ Max Parameter Symbol Conditions Unit Source to Source Breakdown Voltage V I = 1 mA, V = 0 V Test Circuit 1 12 V (BR)SSS S GS Zero Gate Voltage Source Current I V = 10 V, V = 0 V Test Circuit 1 1 A SSS SS GS Gate to Source Leakage Current I V = 8 V, V = 0 V Test Circuit 2 1 A GSS GS SS Gate Threshold Voltage V (th) V = 6 V, I = 1 mA Test Circuit 3 0.4 1.3 V GS SS S Static Source to Source OnState R (on) I = 5 A, V = 4.5 V Test Circuit 4 0.8 1.25 1.8 m SS S GS Resistance I = 5 A, V = 3.8 V Test Circuit 4 0.85 1.35 1.9 m S GS I = 5 A, V = 3.1 V Test Circuit 4 1.0 1.7 2.6 m S GS I = 5 A, V = 2.5 V Test Circuit 4 1.2 2.1 4.2 m S GS TurnON Delay Time t (on) V = 6 V, V = 3.8 V, I = 5 A, 25 s d SS GS S R = 10 k G Rise Time t 100 s r Test Circuit 5 TurnOFF Delay Time t (off) 165 s d Fall Time t 148 s f Total Gate Charge Qg V = 6 V, V = 3.8 V, I = 5 A 62 nC SS GS S Test Circuit 6 Forward Source to Source Voltage V I = 3 A, V = 0 V Test Circuit 7 0.75 1.2 V F(SS) S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) EFC2K103NUZTDG PB WLCSP10, 3.54 1.77 0.140 5,000 / Tape & Reel (PbFree / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2