EFC4612R-TR ON Semiconductor

Ordering number : ENA1477B EFC4612R N-Channel Power MOSFET EFC4612R Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Source-to-Source Breakdown Voltage V I =1mA, V =0V Test Circuit 1 24 V (BR)SSS S GS Zero-Gate Voltage Source Current I V =20V, V =0V Test Circuit 1 1 A SSS SS GS Gate-to-Source Leakage Current I V =8V, V =0V Test Circuit 2 10 A GSS GS SS Cutoff Voltage V (off) V =10V, I =1mA Test Circuit 3 0.5 1.3 V GS SS S Forward Transfer Admittance yfs V =10V, I =3A Test Circuit 4 3.1 S SS S R (on)1 I =3A, V =4.5V Test Circuit 5 24 39 45 m SS S GS R (on)2 I =3A, V =4.0V Test Circuit 5 25 41 48 m SS S GS Static Source-to-Source On-State Resistance R (on)3 I =3A, V =3.7V Test Circuit 5 27.5 43 50 m SS S GS R (on)4 I =3A, V =3.1V Test Circuit 5 31.5 48 57 m SS S GS R (on)5 I =3A, V =2.5V Test Circuit 5 33.5 58 72 m SS S GS Turn-ON Delay Time t (on) 20 ns d Rise Time t 230 ns r See speci ed Test Circuit. Test Circuit 7 Turn-OFF Delay Time t (off) 130 ns d Fall Time t 210 ns f Total Gate Charge Qg V =10V, V =4.5V, I =6A 7 nC SS GS S Forward Source-to-Source Voltage V I =3A, V =0V Test Circuit 6 0.8 1.2 V F(S-S) S GS Ordering Information Device Package Shipping memo EFC4612R-TR EFCP 5,000pcs./reel Pb Free and Halogen Free No. A1477-2/8