EFC4C002NL Power MOSFET for 3-Cells Lithium-ion Battery Protection 30V, 2.6m , 30A, Dual N-Channel, WLCSP8 www.onsemi.com This N-Channel Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications of DRONE or NOTEBOOK PC. V R (on) Max I SSS SS S Max 2.6m 10V Features 30V 3.3m 8V 30A Ultra Low On-Resistance 5.1m 4.5V Low Gate Charge Common-Drain type ELECTRICAL CONNECTION Pb-Free, Halogen Free and RoHS compliance N-Channel 7 6, 8 Applications 3-Cells Lithium-ion Battery Charging and Discharging Switch SPECIFICATIONS 1. Source 1 4, 5 ABSOLUTE MAXIMUM RATINGS at Ta = 25 C (Note 1, 2) 2. Gate 1 Parameter Symbol Value Unit 3. Source 1 Source to Source Voltage V 30 V 4. Drain SSS Gate to Source Voltage 5. Drain V 20 V GSS 6. Source 2 Source Current (DC) I 30 A S 7. Gate 2 Source Current (Pulse) A I 120 SP 8. Source 2 1, 3 2 PW 10 s, duty cycle 1% P Total Dissipation (Note 2) T 2.6 W Junction Temperature Tj 150 C PIN ASSIGNMENT Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage Pin3:S1 Pin1:S1 the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Pin4:D Pin2:G1 Pin6:S2 Pin8:S2 THERMAL RESISTANCE RATINGS Pin5:D Pin7:G2 Parameter Symbol Value Unit BOTTOM VIEW Junction to Ambient (Note 2) R 48 C/W JA 2 Note 2 : Surface mounted on ceramic substrate(5000mm 0.8mm). MARKING DIAGRAM 4C2 AAYWWZ 4C2 = Specific Device Code AA = Assembly Location Y = Year WW = Work Week Z = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : April 2016 - Rev. 0 EFC4C002NL/D EFC4C002NL ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Source to Source Breakdown Voltage V( ) I =1mA, V =0V Test Circuit 1 30 V BR SSS S GS Zero-Gate Voltage Source Current I V =24V, V =0V Test Circuit 1 1 A SSS SS GS Gate to Source Leakage Current I V =20V, V =0V Test Circuit 2 200 nA GSS GS SS Gate Threshold Voltage V (th) V =10V, I =1mA Test Circuit 3 1.3 2.2 V GS SS S Forward Transconductance g V =10V, I =10A Test Circuit 4 16 S FS SS S V =10V, I =10A Test Circuit 5 1.5 2.0 2.6 m GS S Static Source to Source On-State R (on) V =8V, I =10A Test Circuit 5 1.6 2.1 3.3 m SS GS S Resistance 2.2 2.9 5.1 V =4.5V, I =10A Test Circuit 5 m GS S Static Drain to Source On-State 10 m R (on) V =10V, I=1A DS GS S Resistance Gate Resistance R 3 G Turn-ON Delay Time t (on) 40 ns d Rise Time t 750 ns r V =15V, V =10V, I =10A Test Circuit 6 SS GS S t (off) Turn-OFF Delay Time d 280 ns t Fall Time 105 ns f Input Capacitance Ciss V =15V, V =0V, f=1MHz 6,200 pF SS GS Total Gate Charge Qg V =15V, V =4.5V, I =15A Test Circuit 7 45 nC SS GS S Forward Source to Source Voltage V I =10A, V =0V Test Circuit 8 0.75 1.2 V F(S-S) S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2