EFC4K110NUZ MOSFET Power, Dual, N-Channel, for 1-2 Cells Lithium-ion Battery Protection 24 V, 2.95 m , 25 A www.onsemi.com Introduction This Power MOSFET features a low on-state resistance. This device V R MAX I MAX SSS SS(ON) S is suitable for applications such as power switches of portable 24 V 2.95 m 4.5 V 25 A machines. Best suited for 1-2 cells lithium-ion battery applications. 3.0 m 3.8 V Features 4.7 m 3.1 V 2.5 V Drive 7.4 m 2.5 V 2 kV ESD HBM Common-Drain Type ELECTRICAL CONNECTION ESD Diode-Protected Gate 6, 7, 9, 10 This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant 1: Source1 2: Source1 Applications 8 3: Gate1 4: Source1 1-2 Cells Lithium-ion Battery Charging and Discharging Switch 5: Source1 6: Source2 Specifications 7: Source2 3 8: Gate2 ABSOLUTE MAXIMUM RATINGS (T = 25C) (Note 1) A 9: Source2 10: Source2 Parameter Symbol Value Unit 1, 2, 4, 5 Source to Source Voltage V 24 V SSS N-Channel Gate to Source Voltage V 12 V GSS Source Current (DC) I 25 A S PIN ASSIGNMENT Source Current (Pulse) I 100 A SP PW 10 s, duty cycle 1% 1 6 38 2 7 Total Dissipation (Note 1) P 2.5 W T 4 9 Junction Temperature T 150 C j WLCSP10 5 10 Storage Temperature T 55 to +150 C stg (3.20 x 2.10 x 0.14) (Bottom View) CASE 567XT Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL RESISTANCE RATINGS PH AYWZZ Parameter Symbol Value Unit Junction to Ambient (Note 1) R 50 C/W JA PH = Specific Device Code 2 1. Surface mounted on ceramic substrate (5000 mm 0.8 mm). A = Assembly Location Y = Year W = Work Week ZZ = Assembly Lot ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: July, 2019 Rev. 0 EFC4K110NUZ/DEFC4K110NUZ ELECTRICAL CHARACTERISTICS (T = 25C) A Parameter Symbol Conditions Min Typ Max Unit Source to Source Breakdown Voltage V I = 1 mA, V = 0 V 24 V (BR)SSS S GS Zero-Gate Voltage Source Current I V = 19.2 V, V = 0 V 1 A SSS SS GS Gate to Source Leakage Current I V = 8 V, V = 0 V 10 A GSS GS SS Gate Threshold Voltage V (th) V = 10 V, I = 1 mA 0.4 1.3 V GS SS S Static Source to Source On-State R (on) I = 5 A, V = 4.5 V 1.6 2.4 2.95 m SS S GS Resistance I = 5 A, V = 3.8 V 1.7 2.5 3.0 m S GS I = 5 A, V = 3.1 V 2.0 2.9 4.7 m S GS I = 5 A, V = 2.5 V 2.2 3.6 7.4 m S GS Gate Resistance Rg f = 1 MHz 310 Total Gate Charge Qg V = 11.5 V, V = 4.5 V, I = 5 A 49 nC SS GS S Turn-ON Delay Time t (on) V = 11.5 V, V = 4.5 V, R = 2.3 0.6 s d SS GS L R = 0 Switching Test Circuit G Rise Time t 1.6 s r Turn-OFF Delay Time t (off) 7.3 s d Fall Time t 3.2 s f Forward Source to Source Voltage V I = 3 A, V = 0 V 0.75 1.2 V F(S-S) S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. SWITCHING TEST CIRCUIT t (on), t , t (off), t d r d f S2 R L G2 When FET1 is measured, Gate and Source of FET2 V are short-circuited. G1 R g V SS S1 Figure 1. Switching Test Circuit www.onsemi.com 2