MOSFET SiC Power, Single N-Channel, D2PAK-7L 1200 V, 40 m , 60 A NTBG040N120SC1 Features Typ. R = 40 m DS(on) www.onsemi.com Ultra Low Gate Charge (Typ. Q = 106 nC) G(tot) Low Effective Output Capacitance (Typ. C = 139 pF) oss V R MAX I MAX (BR)DSS DS(ON) D 100% Avalanche Tested T = 175C 1200 V 56 m 20 V 60 A J This Device is PbFree and is RoHS Compliant Drain (TAB) Typical Applications UPS DC/DC Converter Boost Inverter Gate (Pin 1) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Driver Source (Pin 2) Parameter Symbol Value Unit DraintoSource Voltage V 1200 V DSS Power Source (Pins 3, 4, 5, 6, 7) GatetoSource Voltage V +25/15 V GS NCHANNEL MOSFET Recommended Operation Values T < 175C V +20/5 V C GSop of Gate Source Voltage Continuous Drain Steady T = 25C I 60 A C D State Current (Note 1) Power Dissipation P 357 W D (Note 1) Continuous Drain Steady T = 100C I 43 A C D State Current (Note 1) D2PAK7L Power Dissipation P 178 W D CASE 418BJ (Note 1) Pulsed Drain Current (Note 2) T = 25C I 240 A A DM MARKING DIAGRAM Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 AYWWZZ Source Current (Body Diode) I 36 A S NTBG 040120SC1 Single Pulse DraintoSource Avalanche E 578 mJ AS Energy (I = 34 A , L = 1 mH) (Note 3) L pk Maximum Lead Temperature for Soldering, T 300 C L A = Assembly Location 1/8 from Case for 10 Seconds Y = Year WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ZZ = Lot Traceability assumed, damage may occur and reliability may be affected. NTBG040120SC1 = Specific Device Code 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. ORDERING INFORMATION 3. E of 578 mJ is based on starting T = 25C L = 1 mH, I = 34 A, V = AS J AS DD See detailed ordering and shipping information on page 6 of 120 V, V = 18 V. GS this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: April, 2021 Rev. 1 NTBG040N120SC1/DNTBG040N120SC1 Table 1. THERMAL CHARACTERISTICS Parameter Symbol Max Units Thermal Resistance JunctiontoCase (Note 1) R 0.42 C/W JC Thermal Resistance JunctiontoAmbient (Note 1) R 40 C/W JA Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1 mA 1200 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 1 mA, refer to 25C 0.45 V/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 100 A DSS GS J V = 1200 V DS T = 175C 1 mA J GatetoSource Leakage Current I V = +25/15 V, V = 0 V 1 A GSS GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 10 mA 1.8 3 4.3 V GS(TH) GS DS D Recommended Gate Voltage V 5 +20 V GOP DraintoSource On Resistance R V = 20 V, I = 35 A, T = 25C 40 56 m DS(on) GS D J V = 20 V, I = 35 A, T = 175C 71 100 m GS D J Forward Transconductance g V = 20 V, I = 35 A 20 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C V = 0 V, f = 1 MHz, 1789 pF ISS GS V = 800 V DS Output Capacitance C 139 OSS Reverse Transfer Capacitance C 12.5 RSS Total Gate Charge Q V = 5/20 V, V = 600 V, 106 nC G(TOT) GS DS I = 47 A D Threshold Gate Charge Q 18 G(TH) GatetoSource Charge Q 34 GS GatetoDrain Charge Q 26 GD f = 1 MHz 2 GateResistance R G SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 5/20 V, V = 800 V, 17 30 ns d(ON) GS DS I = 47 A, R = 4.7 , D G Rise Time t 20 36 r Inductive Load TurnOff Delay Time t 30 48 d(OFF) Fall Time t 9 18 f TurnOn Switching Loss E 366 J ON TurnOff Switching Loss E 200 OFF Total Switching Loss E 566 TOT DRAINSOURCE DIODE CHARACTERISTICS Continuous DrainSource Diode Forward I V = 5 V, T = 25C 36 A SD GS J Current Pulsed DrainSource Diode Forward Current I V = 5 V, T = 25C 240 A SDM GS J (Note 2) Forward Diode Voltage V V = 5 V, I = 17.5 A, T = 25C 3.7 V SD GS SD J www.onsemi.com 2