Green
DMNH10H028SPS
100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
Thermally Efficient Package-Cooler Running Applications
I
D
V R
(BR)DSS DS(ON)
High Conversion Efficiency
T = +25C
C
100V 40A Low R Minimizes On State Losses
28m @ V = 10V DS(ON)
GS
Low Input Capacitance
Fast Switching Speed
Description
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
This MOSFET is designed to minimize the on-state resistance
Halogen and Antimony Free. Green Device (Note 3)
(R ) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMNH10H028SPSQ)
Applications
Power Management Functions
Mechanical Data
DC-DC Converters
Case: POWERDI 5060-8
Case Material: Molded Plastic, Green Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
POWERDI 5060-8
D
S
D
S
D
Pin1
D
S
G
D
G
S
Top View
Top View Pin Configuration
Internal Schematic
Bottom View
Ordering Information (Note 4)
Part Number Case Packaging
DMNH10H028SPS-13 POWERDI 5060-8 2500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMNH10H028SPS
Maximum Ratings (@T = +25C, unless otherwise specified.)
C
Characteristic Symbol Value Unit
Drain-Source Voltage 100 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 40
C
Continuous Drain Current, V = 10V I A
GS D
State 25
T = +100C
C
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 5) I 54 A
DM
Maximum Continuous Body Diode Forward Current (Note 6) 3.9 A
I
S
Avalanche Current (Note 8) L=0.1mH 26 A
I
AS
Avalanche Energy (Note 8) L=0.1mH 35 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 1.6 W
P
D
Steady state
Thermal Resistance, Junction to Ambient (Note 5) R 97 C/W
JA
Total Power Dissipation (Note 6) 2.9 W
P
D
Steady state
Thermal Resistance, Junction to Ambient (Note 6) R 52
JA
C/W
Thermal Resistance, Junction to Case 1.8
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
C
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1.0 A V = 100V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 2.0 2.5 4.0 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 19 28 m V = 10V, I = 20A
DS(ON) GS D
Diode Forward Voltage V 0.7 1.2 V
SD VGS = 0V, IS = 1.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 2245
Ciss
V = 50V, V = 0V
DS GS
Output Capacitance 173 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 68
C
rss
Gate Resistance 1.9
R V = 0V, V = 0V, f = 1.0MHz
G DS GS
36
Total Gate Charge (V = 10V) Q
GS g
Total Gate Charge (V = 6.0V) Q 22
GS g
nC
V = 50V, I = 20A
DD D
Gate-Source Charge Q 7.3
gs
Gate-Drain Charge Q 9.2
gd
Turn-On Delay Time t 6.4
D(ON)
Turn-On Rise Time t 5.8
R V = 10V, V = 50V,
GS DS
ns
Turn-Off Delay Time 17.8 R = 3.0, I = 20A
tD(OFF) G D
Turn-Off Fall Time 4.8
t
F
Reverse Recovery Time 35 ns
t I = 20A, di/dt = 100A/s
RR F
Reverse Recovery Charge 47 nC
Q I = 20A, di/dt = 100A/s
RR F
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
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DMNH10H028SPS December 2015
Diodes Incorporated
www.diodes.com
Document number: DS38047 Rev. 2 - 2