X-On Electronics has gained recognition as a prominent supplier of IPP60R022S7XKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP60R022S7XKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPP60R022S7XKSA1 Infineon

IPP60R022S7XKSA1 electronic component of Infineon
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Part No.IPP60R022S7XKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET HIGH POWER_NEW
Datasheet: IPP60R022S7XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.581 ea
Line Total: USD 9.58 
Availability - 1079
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1079
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 9.581
10 : USD 9.383
25 : USD 6.116
100 : USD 5.984
250 : USD 5.973
500 : USD 5.863

   
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We are delighted to provide the IPP60R022S7XKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP60R022S7XKSA1 and other electronic components in the MOSFETs category and beyond.

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The IPP60R022S7XKSA1 is a high-power MOSFET manufactured by Infineon. This component is a high voltage, high current power MOSFET that features superior switching performance, allowing for a high efficiency operation in a wide range of applications. The component features a thick isolation layer between the gate and source that ensures a higher dielectric strength, allowing the device to handle voltages of up to 600 V. It is designed to provide excellent thermal and power cycling performance, making it suitable for applications with high demand such as AC/DC converters, motor drives, and DC-DC converters.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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