IAUZ30N10S5L240 OptiMOS -5 Power-Transistor Product Summary V 100 V DS R 24 m W DS(on),max I 30 A D Features PG-TSDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified 1 MSL1 up to 260C peak reflow 175C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type Package Marking IAUZ30N10S5L240 PG-TSDSON-8 5N1L240 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C, V =10V 30 A D C GS 1) T =100C, V =10V 22 C GS 1) I T =25C 120 Pulsed drain current D,pulse C 1) E I =12A 17 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 12 A AS V Gate source voltage - 20 V GS T =25C C Power dissipation P 45.5 W tot T =175C J Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 - Rev. 1.0 page 1 2019-07-23 IAUZ30N10S5L240 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 3.3 K/W thJC Thermal resistance, junction - 2 2) R - - 62 thJA 6 cm cooling area ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =V , I =15A Gate threshold voltage 1.2 1.7 2.2 GS(th) DS GS D V =100V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =100V, V =0V, DS GS - - 100 1) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS m W Drain-source on-state resistance R V =4.5V, I =15A - 26 31 DS(on) GS D V =10V, I =15A - 19.5 24 GS D 1) R - 1.5 - W Gate resistance G Rev. 1.0 page 2 2019-07-23