X-On Electronics has gained recognition as a prominent supplier of NTD110N02RT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD110N02RT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD110N02RT4G ON Semiconductor

NTD110N02RT4G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTD110N02RT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET 24V 110A N-Channel
Datasheet: NTD110N02RT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.8125
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Obsolete
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MOQ : 1
Multiples : 2500
1 : USD 2.665
10 : USD 2.3041
100 : USD 1.8519
500 : USD 1.5215
1000 : USD 1.2606
2500 : USD 1.2171
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.665
10 : USD 2.3041
100 : USD 1.8519
500 : USD 1.5215
1000 : USD 1.2606
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.6461
5000 : USD 0.6461
7500 : USD 0.6461
N/A

Obsolete
0
MOQ : 475
Multiples : 475
475 : USD 0.9136
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.745
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.3274
10 : USD 1.5707
25 : USD 1.4745
100 : USD 1.2608
500 : USD 1.0321
1000 : USD 0.858
2500 : USD 0.8302
N/A

Obsolete
0
MOQ : 10
Multiples : 1
10 : USD 1.0289
25 : USD 0.9227
100 : USD 0.8265
250 : USD 0.7526
500 : USD 0.7376
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
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Typical Turn-On Delay Time
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We are delighted to provide the NTD110N02RT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD110N02RT4G and other electronic components in the MOSFETs category and beyond.

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NTD110N02R, STD110N02R MOSFET Power, N-Channel, DPAK 24 V, 110 A Features NTD110N02R, STD110N02R ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V V (BR)DSS (V = 0 V, I = 250 A) 24 28 GS D Positive Temperature Coefficient 15 mV/C Zero Gate Voltage Drain Current I A DSS (V = 20 V, V = 0 V) DS GS 1.5 (V = 20 V, V = 0 V, T = 125C) DS GS J 10 GateBody Leakage Current (V = 20 V, V = 0 V) I 100 nA GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V V GS(th) (V = V , I = 250 A) 1.0 1.5 2.0 DS GS D Negative Threshold Temperature Coefficient 5.0 mV/C Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 10 V, I = 110 A) 4.1 GS D (V = 4.5 V, I = 55 A) GS D 5.5 (V = 10 V, I = 20 A) GS D 3.9 4.6 (V = 4.5 V, I = 20 A) GS D 5.5 6.2 Forward Transconductance (V = 10 V, I = 15 A) (Note 3) g 44 Mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 2710 3440 pF iss Output Capacitance C 1105 1670 (V = 20 V, V = 0 V, f = 1.0 MHz) oss DS GS Transfer Capacitance C 450 640 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 11 22 ns d(on) Rise Time t 39 80 r (V = 10 V, V = 10 V, GS DD I = 40 A, R = 3.0 ) D G TurnOff Delay Time t 27 40 d(off) Fall Time t 21 40 f Gate Charge Q 23.6 28 nC T (V = 4.5 V, I = 40 A, GS D Q 5.1 GS V = 10 V) (Note 3) DS Q 11 GD SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage V 0.82 1.2 V (I = 20 A, V = 0 V) (Note 3) SD S GS (I = 55 A, V = 0 V) 0.99 S GS (I = 20 A, V = 0 V, T = 125C) S GS J 0.65 Reverse Recovery Time ns t 36.5 rr (I = 30 A, V = 0 V, S GS t 30 a dI /dt = 100 A/ s) (Note 3) S t 25 b Reverse Recovery Stored Charge Q 0.048 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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