X-On Electronics has gained recognition as a prominent supplier of NTD3055-094-1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD3055-094-1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD3055-094-1G ON Semiconductor

NTD3055-094-1G electronic component of ON Semiconductor
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Part No.NTD3055-094-1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V 12A N-Channel
Datasheet: NTD3055-094-1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3199 ea
Line Total: USD 0.32 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3199
5 : USD 0.3139
50 : USD 0.2897
250 : USD 0.2475
1000 : USD 0.2269
2500 : USD 0.2221

0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1336
Multiples : 1
1336 : USD 0.2441

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

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NTD3055-094, NVD3055-094 Power MOSFET 12 A, 60 V, NChannel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features NTD3055094, NVD3055094 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 68 GS D Temperature Coefficient (Positive) 54.4 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) (V = V , I = 250 Adc) 2.0 2.9 4.0 DS GS D Threshold Temperature Coefficient (Negative) 6.3 mV/C Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 10 Vdc, I = 6.0 Adc) 84 94 GS D Static DraintoSource OnVoltage (Note 3) V Vdc DS(on) (V = 10 Vdc, I = 12 Adc) 0.85 1.35 GS D (V = 10 Vdc, I = 6.0 Adc, T = 150C) 0.77 GS D J Forward Transconductance (Note 3) (V = 7.0 Vdc, I = 6.0 Adc) g 6.7 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 323 450 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 107 150 oss f = 1.0 MHz) Transfer Capacitance C 34 70 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 7.7 15 ns d(on) Rise Time t 32.3 70 r (V = 48 Vdc, I = 12 Adc, DD D V = 10 Vdc, R = 9.1 ) (Note 3) TurnOff Delay Time GS G t 25.2 50 d(off) Fall Time t 23.9 50 f Gate Charge Q 10.9 20 nC T (V = 48 Vdc, I = 12 Adc, DS D Q 3.1 1 V = 10 Vdc) (Note 3) GS Q 4.2 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 12 Adc, V = 0 Vdc) (Note 3) V 0.94 1.15 Vdc S GS SD (I = 12 Adc, V = 0 Vdc, T = 150C) 0.82 S GS J Reverse Recovery Time t 33.1 ns rr (I = 12 Adc, V = 0 Vdc, S GS t 24 a dI /dt = 100 A/ s) (Note 3) S t 8.9 b Reverse Recovery Stored Charge Q 0.047 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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